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Method of preparing warp-free group-III nitride composite substrate and substrate placing device

A composite substrate and nitride technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems that affect the material growth device preparation process, warping, etc., to ensure uniformity, improve crystal quality, and reduce production costs. Effect

Active Publication Date: 2016-08-10
PEKING UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conventional quasi-homoepitaxy still faces serious warpage problems, which affect subsequent material growth and device fabrication processes

Method used

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  • Method of preparing warp-free group-III nitride composite substrate and substrate placing device
  • Method of preparing warp-free group-III nitride composite substrate and substrate placing device
  • Method of preparing warp-free group-III nitride composite substrate and substrate placing device

Examples

Experimental program
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Effect test

Embodiment 1

[0032] Embodiment 1. Preparation of c-plane GaN thick film substrate by HVPE method:

[0033] 1) The graphite frame is designed to stand the double-sided substrate upright in the HVPE reaction chamber for simultaneous epitaxial growth on both sides. When placing the sapphire substrate, make the Al side face the edge of the disk;

[0034] In addition to the sapphire substrate, the double-sided substrate can also be other materials that can realize GaN growth, such as silicon carbide substrate, GaN substrate, Si substrate, LiAlO 2 Substrate etc.

[0035] 2) Epitaxial thin films or microstructures with a certain thickness on both sides of the substrate;

[0036] On the above substrate, epitaxial growth equipment (HVPE, MOCVD, MBE, magnetron sputtering, etc.) is used to form a certain thickness of GaN, InGaN, AlGaN, AlN, InN thin film or microstructure on both sides of the substrate. In this embodiment, HVPE equipment is used to epitaxially GaN thin film structures on both sides...

Embodiment 2

[0042] Embodiment 2, MOCVD growth non-polar a-plane thick-film GaN composite substrate:

[0043] 1) The graphite rack is designed to stand the double-sided substrate upright in the MOCVD reaction chamber for simultaneous epitaxial growth on both sides, and place the substrate so that the Al side faces the edge of the disk;

[0044] The double-sided substrate: can be r-plane sapphire, silicon carbide, Si and other substrates. In this embodiment, the r-plane sapphire substrate is selected, and the a-plane GaN is obtained from the r-plane sapphire epitaxy by the method of the present invention.

[0045] 2) Epitaxial thin films or microstructures with a certain thickness on both sides of the substrate;

[0046] On the above substrate, use the MBE growth technology to grow InN nano-column structures on both sides of the substrate successively to form a transition layer. The growth temperature range of InN nanopillars is 350-500°C, 400°C is used in this embodiment; the height is 10...

Embodiment 3

[0052] Embodiment 3. Preparation of non-polar m-plane GaN thick film substrate by magnetron sputtering method:

[0053] 1) The graphite frame is designed to stand the double-sided substrate upright in the magnetron sputtering reaction chamber for simultaneous epitaxial growth on both sides. When placing the substrate, the Al side faces the edge of the disk;

[0054] The substrate is polished on both sides, which can be Y-LiAlO 2 , silicon carbide, Si and other substrates;

[0055] 2) Epitaxial thin films or microstructures with a certain thickness on both sides of the substrate;

[0056] The above substrate was grown on both sides of the substrate by MOCVD growth technology. 0.05 Ga 0.95 The transition layer of the N nanopillar structure. al 0.05 Ga 0.95 The height of N nanopillars is 200nm-500nm, 300nm is used in this embodiment, and the growth temperature is 1050-1200°C, 1100°C is used in this embodiment.

[0057] 3) An m-plane GaN material is grown on the transition ...

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Abstract

The invention discloses a method of preparing a warp-free group-III nitride composite substrate and a substrate placing device. A substrate with both sides polished is erected on the substrate placing device and placed in a reaction chamber, a group-III nitride film or microstructure is grown on the both sides at the same time in an epitaxial manner to form a buffer layer, thick-film group-III nitride is grown on the both sides at the same time, and the epitaxial thickness of one side of the AL surface of sapphire is slightly greater than the epitaxial layer thickness of one side of the O surface. The substrate placing device is a multi-piece graphite frame, and comprises a base, a hole, rollers, and slots. The substrate can be rotated, and the uniformity in thickness of the grown films is ensured. Warping is inhibited, the quality of crystal is improved, and the obtained composite substrate can be used as a group-III nitride quasi-homogeneous epitaxial substrate to prepare related optoelectronic devices. According to the invention, the space of the reaction chamber is fully utilized, the production cost is reduced, the process is simple and easy to control, and different substrates can be selected and a variety of equipment can be used to grow a variety of thick-film group-III nitride substrates.

Description

technical field [0001] The invention belongs to the field of preparation of optoelectronic devices, and relates to a preparation technology of an efficient non-warping group III nitride compound substrate. Background technique [0002] Group III nitride semiconductors have gradually developed into a new generation of lighting sources due to their advantages such as long life, energy saving, environmental protection, rich colors, safety and stability. However, since GaN-based LEDs mainly use sapphire substrates, there is a large lattice mismatch and thermal expansion coefficient mismatch between GaN and GaN. Therefore, as the thickness of the epitaxial layer increases, the stress gradually accumulates, which leads to warping of the template. Qu, which caused great difficulties for the next step of device preparation. [0003] In terms of material growth: due to the existence of warping, during the quantum well growth process on the HVPE thick film template, the distance betw...

Claims

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Application Information

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IPC IPC(8): H01L33/30H01L33/00
Inventor 吴洁君程玉田于彤军韩彤张国义
Owner PEKING UNIV
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