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The processing method of the processed object

A technology of the object to be processed and the processing method, which is applied in the manufacturing of semiconductor/solid-state devices, electrical components, circuits, etc., can solve problems such as the influence of resolution limit, and achieve the effect of reducing the deviation of film thickness

Active Publication Date: 2018-11-27
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the limit size of the pattern formed on the etched layer is affected by the resolution limit of the resist mask formed by photolithography

Method used

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  • The processing method of the processed object
  • The processing method of the processed object
  • The processing method of the processed object

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1～2 and comparative experiment example 1

[0123] In Experimental Example 1, a silicon oxide film was formed on the flat surface of a wafer having a diameter of 300 mm by the method MTA. In addition, in Experimental Example 2, a silicon oxide film was formed on the flat surface of a wafer with a diameter of 300 mm by the method MTB. Also, in Comparative Experiment 1, a silicon oxide film was formed on the flat surface of a wafer with a diameter of 300 mm by omitting Step STA2 , Step STP2 , Step STA4 , and Step STP4 from the method MTA.

[0124] In Experimental Example 1, the conditions of each step were set to the conditions shown below. In addition, the number of executions of the flow SQA in Experimental Example 1 is 60 times.

[0125]

[0126] ·Pressure inside the processing container: 200mTorr (26.66Pa)

[0127] ·SiCl 4 Gas flow: 14sccm

[0128] ·Ar gas flow rate: 200sccm

[0129] · High-frequency power of the first high-frequency power supply 62 (supplied to the upper electrode 30 ): 60 MHz, 100 W

[0130]...

experiment example 3 and comparative experiment example 2

[0195] In Experimental Example 3, a silicon oxide film was formed on the flat surface of a wafer with a diameter of 300 mm by the method MTA. Also, in Comparative Experiment Example 2, a silicon oxide film was formed on the flat surface of a wafer with a diameter of 300 mm by omitting Step STP1, Step STP2, Step STP3, and Step STP4 from the method MTA.

[0196] In Experimental Example 3, the conditions of each step were set to the conditions shown below. In addition, the number of executions of the flow SQA in Experimental Example 3 is 60 times.

[0197]

[0198] ·Pressure inside the processing container: 200mTorr (26.66Pa)

[0199] ·SiCl 4 Gas flow: 14sccm

[0200] ·Ar gas flow rate: 200sccm

[0201] · High-frequency power of the first high-frequency power supply 62 (supplied to the upper electrode 30 ): 60 MHz, 100 W

[0202] · High-frequency bias power of the second high-frequency power supply 64: 13.56 MHz, 0 W

[0203] · Processing time: 2 seconds

[0204]

[02...

experiment example 4～6 and comparative experiment example 3

[0240] In Experimental Example 4, a silicon oxide film was formed on the flat surface of a wafer with a diameter of 300 mm by the method MTA. In Experimental Example 5 and Experimental Example 6, a silicon oxide film was formed on the flat surface of a wafer having a diameter of 300 mm by the method MTB. However, in Step STB4 of Experimental Example 5, the flow rate of Ar gas was set to 200 sccm, and in Step STB4 of Experimental Example 6, the flow rate of Ar gas was set to 1300 sccm. In Comparative Experiment Example 3, a silicon oxide film was formed on the flat surface of a wafer having a diameter of 300 mm by omitting Step STA2 and Step STA4 from the method MTA. In addition, in Experimental Examples 4 to 6 and Comparative Experimental Example 3, the conditions of each step were set such that the film thicknesses of the silicon oxide films were substantially equal.

[0241] Specifically, in Experimental Example 4, the conditions of each step were set to the conditions show...

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Abstract

The present invention provides a method of processing an object by which variation in film thickness of a silicon oxide film formed on an object to be processed can be reduced even if an opening of a mask has a high aspect ratio. In the method according to one embodiment, a silicon oxide film is formed by repeatedly performing a process including the steps of: (a) generating plasma of a first gas containing a silicon halide gas in a processing vessel of a plasma processing apparatus, thereby A first step of forming a reactive precursor on the treatment body; (b) after the first step, a second step of generating a plasma of a rare gas in the processing vessel; (c) after the second step, generating plasma of a second gas containing oxygen, a third step of forming a silicon oxide film; and (d) a fourth step of generating plasma of a rare gas in the processing vessel after the third step.

Description

technical field [0001] The present invention relates to a method of processing an object to be processed, and more particularly to a method including the production of a mask. Background technique [0002] In a manufacturing process of an electronic device such as a semiconductor device, a mask is formed on a layer to be etched, and etching is performed to transfer a pattern of the mask to the layer to be etched. As a mask, a resist mask is generally used. The resist mask is formed by photolithography. Therefore, the limit size of the pattern formed on the layer to be etched is affected by the resolution limit of the resist mask formed by photolithography. [0003] However, in recent years, with the high integration of electronic devices, it is required to form a pattern whose size is smaller than the resolution limit of a resist mask. Therefore, as described in Patent Document 1, there is proposed a technique of reducing the width of openings defined by the resist mask b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/311
CPCH01L21/02107H01L21/02252H01L21/31116H01L21/31138H01L21/31144H01L21/02164H01L21/02274H01L21/0228H01L21/0337H01L21/02208H01L21/0276
Inventor 木原嘉英久松亨大石智之本田昌伸
Owner TOKYO ELECTRON LTD
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