Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical-mechanical polishing equipment and process

A chemical machinery and polishing machine technology, applied in polishing machine tools, metal processing equipment, manufacturing tools, etc., can solve the problems of inconsistent film thickness and wafer film thickness, and achieve the effect of reducing film thickness differences

Active Publication Date: 2009-04-08
UNITED MICROELECTRONICS CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the purpose of this invention is to provide a kind of chemical mechanical polishing equipment, to effectively solve the problem of inconsistent film thickness between each wafer
[0006] Another object of the present invention is to provide a chemical mechanical polishing process to effectively solve the problem of inconsistent film thickness between each wafer
[0007] Another object of the present invention is to provide a chemical mechanical polishing process to effectively solve the problem of inconsistent film thickness between each wafer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical-mechanical polishing equipment and process
  • Chemical-mechanical polishing equipment and process
  • Chemical-mechanical polishing equipment and process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The chemical mechanical polishing equipment of the present invention is at least composed of a polishing machine, a first thickness measuring instrument and a second thickness measuring instrument, wherein the first thickness measuring instrument is connected with the polishing machine, and the second thickness measuring instrument The instrument is connected with the polishing machine.

[0026] In a preferred embodiment, the first thickness measuring instrument is, for example, a metal thickness measuring instrument, and the second thickness measuring instrument is, for example, a dielectric material thickness measuring instrument. Among them, the metal thickness measuring instrument, for example, uses the reflected waves generated by laser at different interfaces (for example, the interface between the metal layer and the dielectric layer) to measure the thickness, and the dielectric material thickness measuring instrument, for example, uses Optical principles such as...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The chemico-mechanical polishing equipment consists of polishing machine, the first thickness measurer and the second thickness measurer connected to the polishing machine. Both the first thickness measurer and the second thickness measurer are used to complete the in-situ measurement of the thicknesses of the first material and the second material after polishing, and this can decrease the difference of chips in film thickness.

Description

technical field [0001] The invention relates to a semiconductor device and a process, in particular to a chemical mechanical polishing device and a chemical mechanical polishing process (Chemical Mechanical Polishing, CMP). Background technique [0002] The chemical mechanical polishing process is currently commonly used in the planarization of the film layer (Planarization). Polishing pads move relative to each other on the wafer surface to achieve planarization. [0003] The chemical mechanical polishing process has a wide range of applications, for example, the metal interconnection process is one of them. In the metal interconnection process, an opening is first etched in the dielectric layer, and then a lining layer is formed on the opening and the surface of the dielectric layer. Then, cover the metal layer filling the opening on the lining layer. Then, the chemical mechanical polishing process is used to sequentially remove the metal layer and the lining layer outs...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B24B39/06H01L21/304
Inventor 胡俊汀谢祖怡曾子育郭永杰白弘吉
Owner UNITED MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com