Device and method for analyzing content of phosphorane impurities in electronic grade arsenic hydride

Abstract

The invention provides a device and method for analyzing content of phosphorane impurities in electronic grade arsenic hydride. The device for analyzing the content of phosphorane impurities in electronic grade arsenic hydride is characterized by comprising a ten-way valve, a quantitative loop, a first separating analytical column, a second separating analytical column and a detector, wherein the No.10 port of the ten-way valve is communicated with a carrier gas inlet; the No.9 port of the ten-way valve is connected with the first separating analytical column; the first separating analytical column is connected with the second separating analytical column; the second separating analytical column is connected with the detector; the No.6 port of the ten-way valve is connected with a sample outlet; the No.7 port of the ten-way valve is connected with a sample inlet; and in a detection state, the No.10 port of the ten-way valve is communicated with the No.1 port, the No.1 port is communicated with the No.4 port, the No.4 port is communicated with the No.5 port, the No.5 port is communicated with the No.8 port through the quantitative loop, the No.8 port is communicated with the No.9 port, and the No.6 port is communicated with the No.7 port. The device provided by the invention has the advantages of high accuracy in analyzing the trace phosphorane impurities in electronic grade arsenic hydride, short analysis time, less sample consumption and high sensitivity.

Description

technical field [0001] The invention relates to a method for measuring the impurity concentration of trace phosphorane in electronic grade arsine. Background technique [0002] Arsane (AsH 3 ) is an important raw material for light-emitting diodes (LEDs), VLSIs, and gallium arsenide (GaAs) solar cells. With the rapid development of the electronics industry, the requirements for the content of impurities in arsane are becoming more and more stringent. The purity of arsine used in the electronics industry is about 6N (99.9999%). Even a very small amount of impurity gas entering the process may cause The quality of the final electronic component product deteriorates. The impact of phosphine (PH3) impurities on product quality is particularly significant. As an important quality control index, how to accurately and reliably determine trace phosphine impurities in arsane is one of the main problems to be faced in the production and application of arsine . Due to the similar p...

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Problems solved by technology

[0003] The Chinese patent with the publication number CN103645269B discloses an analysis method for ultra-pure arsine. The CST, 5A molecular sieve and HaysepQ packed chromatographic column used in it can only decompose the H in the arsine body. 2 , O 2 +Ar, N 2 , CH 4 , CO, CO 2 Impurities are separated, but the PH in them cannot be 3 Separation of impurities, the method cannot detect trace phosphine impurity content in arsane

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