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A kind of preparation method of novel solar cell

A solar cell, a new type of technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as reducing the conversion efficiency of solar cells, and achieve the effects of good surface morphology, cost reduction, and good photoelectric performance

Inactive Publication Date: 2017-05-10
HUANGHUAI UNIV
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  • Claims
  • Application Information

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Problems solved by technology

In the whole process, about 60% of the silicon material is lost in the form of sharp marks; in addition, due to the recombination on the back of the silicon solar cell, the conversion efficiency of the solar cell is further reduced

Method used

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Embodiment 1

[0034] a. Preparation of metallurgical grade substrate silicon wafer

[0035] The preparation of the substrate silicon wafer uses a physical purification method. Firstly, metal silicon with a purity of 2N is taken, and metal elements and boron elements are removed by blowing slagging method to obtain metal silicon with a purity of 3N. The metal silicon with a purity of 3N is pickled to remove metal Elements, boron and phosphorus elements, and then cast ingots to obtain silicon ingots with a purity of 4N, cut the silicon ingots into 156mm x 156mm wide, and 500μm thick substrate silicon wafers, and clean the substrate silicon wafers according to standard semiconductor cleaning processes .

[0036] The minority carrier lifetime of the substrate silicon wafer is 5 μs, and the resistivity is 2.4 Ohmcm. Among them, the requirements for main impurities in the substrate silicon wafer: B<2ppmw, P<3ppmw, Fe<0.16ppmw, Al<0.2ppmw, Ca< 0.2ppmw.

[0037] The key of this step lies in the p...

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Abstract

The invention relates to a novel solar cell preparation method. In order to reduce the manufacturing cost of a solar cell and improve the conversion efficiency, the method comprises the steps: manufacturing a substrate silicon wafer through employing a physical purification method; preparing a silicon nitride film through employing a plasma enhanced chemical vapor deposition method; preparing a polycrystalline silicon film through employing a graphite sucking disc dipping method; opening a hole on the back surface of the solar cell through employing a picosecond laser after the annealing processing of the solar cell; and finally completing the preparation of the solar cell through employing a conventional solar cell PN node, anti-reflection film and electrode manufacturing method. The method does not need ingot casting and slicing, is safe, has no pollution, is simple in technology, and can enable the production cost of the solar cell to be greatly reduced. In addition, the method improves the conversion efficiency of the solar cell through combining a PERC solar cell preparation method, can achieves the industrialized large-scale production of low-cost and high-efficiency solar cells.

Description

technical field [0001] The invention relates to a preparation method of a novel solar cell, which belongs to the field of new energy. Background technique [0002] Energy and environmental issues are two major themes facing mankind in the 21st century. Crystalline silicon solar cells are semiconductor devices that convert solar energy into electrical energy. In the near future, photovoltaic power generation will partially replace traditional fossil energy in the energy structure. At present, the main obstacles restricting the large-scale application of silicon crystalline solar cells are still cost and efficiency issues. Improving the conversion efficiency of solar cells and reducing production costs are the focus and constant pursuit of photovoltaic research. Silicon wafers account for about 30%-40% of the cost of silicon solar cells, so continuing to reduce the cost of silicon wafers is still an important research direction. The traditional silicon wafer production meth...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02E10/547Y02P70/50
Inventor 李建功闫慧芳
Owner HUANGHUAI UNIV
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