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Continuous distillation trichlorosilane gasification supply device

A trichlorosilane and supply device technology, which is applied in steam condensation, post-processing devices, gaseous chemical plating, etc., can solve the problems of increased cost of peripheral equipment, increased condenser capacity and heat transfer area, increased cost, etc. Achieve the effects of energy cost reduction, device cost reduction, and device installation area reduction

Active Publication Date: 2019-05-28
TECHNO BOUNDARY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] However, by increasing the temperature of the trichlorosilane liquid in the evaporator to increase the total evaporation, although it can prevent the evaporation from not being reached, the capacity and heat transfer area of ​​the condenser need to be increased at the same time
In this way, increasing the capacity of the evaporator and expanding the scale of the device will not only increase the cost, but also will be subject to stricter supervision according to the scale law (Fire Protection Law-Hazardous Substances, Labor Safety and Health Law-Pressure Capacity), and even peripheral equipment, etc. need to increase costs

Method used

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  • Continuous distillation trichlorosilane gasification supply device
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  • Continuous distillation trichlorosilane gasification supply device

Examples

Experimental program
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Effect test

Embodiment 1

[0110] The volume of the main equipment evaporator of the device of the present invention is about 3 liters, and the heat transfer area of ​​the condenser is about 0.9m 2 . The pressure regulator is a so-called mechanical pressure reducing valve, which is connected to one silicon epitaxial growth apparatus for testing. A so-called single-wafer type device was used for the test silicon epitaxial growth device. The epitaxial substrate is made of P coated with oxide film inside +substrate. During the epitaxial growth process, the growth rate of the epitaxial film is 3 μm / min, the thickness is 4.5 μm, and the growth time is 90 seconds. It is 12 liters / min. On the other hand, the trichlorosilane produced by the device of the present invention under the conditions that the total pressure is 0.149±0.0015Mpa (gauge pressure), the condensation temperature is 15.0±0.1°C, and the temperature of the trichlorosilane liquid in the evaporator is 35±0.5°C The concentration of the mixed g...

Embodiment 2

[0112] The effect of using a precision pressure regulator is reviewed. The volume of the main equipment evaporator of the device of the present invention is about 3 liters, and the heat transfer area of ​​the condenser is about 0.9m 2 . The pressure regulator is an electronic pressure control valve with a very fast response speed, and it is connected to a silicon epitaxial growth device for testing. A so-called single-wafer type device was used for the test silicon epitaxial growth device. The epitaxial substrate is made of P coated with oxide film inside + substrate. During the epitaxial growth process, the growth rate of the epitaxial film is 3 μm / min, the thickness is 4.5 μm, and the growth time is 90 seconds. It is 12 liters / min. On the other hand, the trichlorosilane produced by the device of the present invention under the conditions that the total pressure is 0.150±0.0005Mpa (gauge pressure), the condensation temperature is 15.0±0.1°C, and the temperature of the tr...

Embodiment 3

[0114] The effect of increasing the flow rate of trichlorosilane·hydrogen gas mixture was examined. The volume of the main equipment evaporator of the device of the present invention is about 3 liters, and the heat transfer area of ​​the condenser is about 0.9m 2 . The pressure regulator is an electronic pressure control valve with a very fast response speed, and it is connected to a silicon epitaxial growth device for testing. A so-called single-wafer type device was used for the test silicon epitaxial growth device. The epitaxial substrate is made of P coated with oxide film inside + substrate. During the epitaxial growth process, the growth rate of the epitaxial film is 3.45 μm / min, the thickness is 4.5 μm, and the growth time is 78 seconds. The period is 18 liters / min. On the other hand, the device of the present invention produces trichlorosilane under the conditions that the total pressure is 0.150±0.0005Mpa (gauge pressure), the condensation temperature is 15.1±0.2...

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Abstract

The present invention provides a trichlorosilane gasification supply device used in the semiconductor industry and the like. The trichlorosilane gasification supply device of the present invention comprises: evaporator 1, is provided with the import port 3 of the hydrogen as carrier gas, also has the heating device 16 that makes liquid trichlorosilane vaporize; Condenser 2, has A cooling device 20 that condenses the gas at a temperature corresponding to the saturated vapor pressure of the vapor pressure of the vaporized trichlorosilane gas; a precision temperature control mechanism and a precision pressure regulation mechanism 5 of the condenser, wherein the central line of the evaporator and the condensation The central lines of the condenser are not on the same line, and the lower end of the condenser and the lower end of the evaporator are communicated through pipes 13 and 14. In addition, during the control process, the total flow rate of the trichlorosilane-hydrogen mixed gas whose concentration is adjusted is linked with the temperature ratio of the liquid trichlorosilane 17 in the evaporator.

Description

technical field [0001] The present invention relates to a continuous distillation type trichlorosilane gasification supply device and a continuous distillation type trichlorosilane gasification method for producing raw materials used in the semiconductor industry and the like. Background technique [0002] Trichlorosilane (SiHCl3, boiling point 31.8°C), tetrachlorosilane (SiCl4, boiling point 57.6°C), germanium tetrachloride (GeCl4, boiling point 84°C) are used in the manufacturing process of silicon epitaxial wafers and integrated equipment using it. ), these substances are liquid at room temperature and are usually vaporized before being utilized. [0003] A trichlorosilane consumption facility used in the above-mentioned manufacturing process, which includes means for introducing raw material gas, heat sources such as infrared lamps, a reaction vessel made of quartz glass for cutting off external air, and gas exhaust means. [0004] Inside the reaction vessel was a SiC-c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205C01B33/107C30B25/14C30B29/06
CPCC30B25/14C30B29/06H01L21/02532H01L21/0262B01D5/0057C30B35/007Y02E60/32C23C16/4482F17C9/02G05B15/02
Inventor 丸谷新治
Owner TECHNO BOUNDARY
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