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Method for preparing large-area perovskite solar cell based on spraying technology

A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of inability to apply device preparation, limit the industrialization development of perovskite solar cells, and high material waste rate, and achieve good industrialization prospects and good repeatability and controllability, the effect of increasing interface resistance

Inactive Publication Date: 2016-06-08
MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the spin-coating method is only suitable for smaller substrates (generally no more than 300mm), and the material waste rate is high, so it cannot be applied to the preparation of large-area devices, thus limiting the industrialization of perovskite solar cells.

Method used

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  • Method for preparing large-area perovskite solar cell based on spraying technology

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] like figure 1 As shown, the FTO glass substrate was placed on the stage and sprayed with TiO 2 solution to prepare an electron transport layer with a thickness of 20 nm; spray PbI with a concentration of 0.5 mol / L on the electron transport layer 2 The solution was placed on a heating table and heated to 70 ° C for 30 min to prepare PbI 2 film; then continued to spray CH at a concentration of 20 mg / mL 3 NH 3 I solution was placed on a heating table and heated to 90 ° C for 120 min to prepare CH with a thickness of 300 nm. 3 NH 3 PbI 3 The thin film is the perovskite light absorption layer; after the substrate is cooled to room temperature, the substrate is cleaned with isopropanol and dried; the Spiro-MEOTAD solution is sprayed to prepare a 200 nm hole conduction layer; finally, the silver nanowire / graphene is sprayed. alcohol solution, and heated at 100 °C for 5 min to prepare a 100 nm counter electrode, thus preparing a perovskite solar cell; during the spraying ...

Embodiment 2

[0024] Place the FTO glass substrate on the stage to spray TiO 2 solution to prepare an electron transport layer with a thickness of 20 nm; spray PbI with a concentration of 0.8 mol / L on the electron transport layer 2 The solution was placed on a heating table and heated to 80 ° C for 30 min to prepare PbI 2 film; then continued to spray CH at a concentration of 40 mg / mL 3 NH 3 I solution was placed on a heating table and heated to 100 ° C for 120 min to prepare CH with a thickness of 400 nm. 3 NH 3 PbI 3 The thin film is the perovskite light absorption layer; after the substrate is cooled to room temperature, the substrate is cleaned with isopropanol and dried; the Spiro-MEOTAD solution is sprayed to prepare a 200 nm hole conduction layer; finally, the silver nanowire / graphene is sprayed. alcohol solution, and heated at 100 °C for 5 min to prepare a 100 nm counter electrode, thus preparing a perovskite solar cell; during the spraying process, the FTO glass substrate was ...

Embodiment 3

[0026] Place the FTO glass substrate on the stage to spray TiO 2 solution to prepare an electron transport layer with a thickness of 20 nm; spray PbI with a concentration of 1 mol / L on the electron transport layer 2 The solution was placed on a heating table and heated to 90 ° C for 30 min to prepare PbI 2 film; then continued to spray CH at a concentration of 50 mg / mL 3 NH 3 I solution was placed on a heating table and heated to 110 ° C for 120 min to prepare CH with a thickness of 500 nm. 3 NH 3 PbI 3 The film is the perovskite light absorbing layer; after the substrate is cooled to room temperature, the substrate is cleaned with isopropanol and dried; the Spiro-MEOTAD solution is sprayed to prepare a 200nm hole conduction layer; finally, graphene is sprayed and heated at 100°C Heating for 5 min under low temperature, the counter electrode of 150 nm was prepared, and the perovskite solar cell was prepared in this way; during the spraying process, the FTO glass substrate...

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Abstract

The invention discloses a method for preparing a large-area perovskite solar cell based on spraying technology. The method comprises the following steps: firstly putting a transparent conductive base on a platform and spraying an electronic transmission layer; and preparing a perovskite optical absorption layer by a continuous spraying method: firstly spraying a PbI2 solution on the electronic transmission layer, and heating for 30min at 70-90 DEG C; further spraying a CH3NH3I solution and heating for 120min at 90-110 DEG C; cooling to room temperature, washing with isopropyl alcohol and drying; spraying a hole conduction layer; and finally, spraying a silver nanowire / graphene to prepare a counter electrode. In the invention, the parameters of the spraying technology are adjusted to realize preparation of the large-area perovskite solar cell; and the preparation method is simple and easy to implement, can realize low-cost preparation of an efficient perovskite solar cell and has a good industrialization prospect.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing a large-area perovskite solar cell based on a spraying process. Background technique [0002] Currently, due to organo-metal halide (CH 3 NH 3 PbX 3 ) has similar properties to calcium titanate (ABX 3 ) crystal structure, with excellent light absorption ability, considerable ambipolar carrier mobility, ultralong electron-hole diffusion length, and its band gap width can be tuned by adjusting the material composition, which is considered to be a A promising photovoltaic material. [0003] Perovskite solar cells are based on organo-metal halide (CH 3 NH 3 PbX 3 ) as the core light absorption, photoelectric conversion, and photogenerated carrier transport materials for solar cells. Perovskite-type organo-metal halides (CH 3 NH 3 PbX 3 ) has excellent light absorption ability, considerable ambipolar carrier mobility, ultra-long electron-hole diff...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/48H01L51/44
CPCH10K30/80H10K30/00Y02E10/549
Inventor 杨丽军赵晓冲杨盼王劲川
Owner MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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