Method for forming mask and semiconductor device

A reticle and semiconductor technology, which is applied to instruments, photo-engraving processes of patterned surfaces, originals used for opto-mechanical processing, etc. Improved accuracy, reduced self-heating effects, reduced deformation effects

Active Publication Date: 2020-02-07
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, some internal reasons of the existing reticle structure, as well as the temperature difference of the reticle at different exposure times and other factors, reduce the ability of the imaging system to form accurate patterns, resulting in a large overlay error

Method used

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  • Method for forming mask and semiconductor device
  • Method for forming mask and semiconductor device
  • Method for forming mask and semiconductor device

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Experimental program
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Embodiment Construction

[0043] As mentioned in the background art, some internal reasons of the existing reticle structure, and the influence of factors such as the temperature difference of the reticle at different exposure times, reduce the ability of the imaging system to form accurate patterns, resulting in a large overlay accuracy error .

[0044] A reticle typically includes a substrate and a light shielding layer on the substrate. The light shielding layer includes a graphic area (the graphic area may also be called a window area or an opening area) and a non-graphic area (the non-graphic area may also be called a non-window area or a non-opening area).

[0045] After analysis, the overlay accuracy error is usually caused by the self-heating effect of the reticle. The reasons for the self-heating effect of the reticle are as follows: when the reticle is subjected to short-wavelength illumination such as deep ultraviolet (DUV) light or extreme ultraviolet (EUV) light, the non-pattern area of ​...

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PUM

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Abstract

The invention provides a reticle and a forming method of a semiconductor device. The reticle comprises a substrate, a shade layer placed on the substrate and a main pattern placed in the shade layer and further comprises an auxiliary pattern placed in the shade layer, wherein the auxiliary pattern is placed inside the main pattern or at the periphery of the main pattern and is used for increasing the light transmittance of the reticle. The reticle has the advantages that the light transmittance of the reticle is increased due to arrangement of the auxiliary pattern; since the area of the reticle, receiving irradiation of exposure light, is reduced, absorbed light is reduced, the self-heating effect of the reticle is decreased, the self deformation of the reticle is reduced, further the deflection of a device pattern formed by using the reticle can be prevented, and the pattern accuracy of a semiconductor device formed by using the reticle can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a mask and a method for forming a semiconductor device. Background technique [0002] The fabrication of integrated circuit structures requires the formation of minute structures with precisely controlled dimensions on silicon substrates, silicon on insulator (SOI) substrates, or other suitable semiconductor substrates. Patterns are formed on a semiconductor substrate by performing processes such as lithography, etching, ion implantation, deposition, and oxidation. In order to form minute structures with precisely controlled dimensions, a mask layer needs to be formed on the semiconductor substrate, and the mask layer is used to define these minute structures, usually in the pattern generation process stage. [0003] In general, the mask layer can be, for example, a patterned photoresist layer produced by a lithographic process, or a hard mask layer that can be formed ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/38
Inventor 沈满华祖延雷
Owner SEMICON MFG INT (SHANGHAI) CORP
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