Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Element-processing layered structure, method for manufacturing element-processing layered structure, and method for manufacturing thin element using same

A manufacturing method and laminated body technology, applied in semiconductor/solid-state device manufacturing, electrical components, chemical instruments and methods, etc., can solve problems such as reduced adhesion, melting of solder bumps, inability to peel off, etc., and achieve the effect of improving productivity

Inactive Publication Date: 2016-05-25
TORAY IND INC
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, temporary adhesives that are peeled off by heat treatment have the following problems: the solder bumps are melted during the heating process for peeling; to rise, to become inextricable; etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Element-processing layered structure, method for manufacturing element-processing layered structure, and method for manufacturing thin element using same
  • Element-processing layered structure, method for manufacturing element-processing layered structure, and method for manufacturing thin element using same
  • Element-processing layered structure, method for manufacturing element-processing layered structure, and method for manufacturing thin element using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0083] The following examples are given to illustrate the present invention, but the present invention is not limited by these examples. Evaluation methods for glass transition temperature, weight loss rate, and adhesive force will be described.

[0084] (1) Determination of glass transition temperature

[0085] Using a bar coater, apply the heat-resistant resin solutions (B1 to B9, A1 to A6) described in Production Examples 1 to 15 below to a thickness of 20 μm on the glossy surface of an electrodeposited copper foil with a thickness of 18 μm , and then dried at 80° C. for 10 minutes, dried at 150° C. for 10 minutes, and then heat-treated at 250° C. for 10 minutes in a nitrogen atmosphere to convert to polyimide and obtain resin-laminated copper foil. Next, the entire surface of the copper foil in the obtained resin-laminated copper foil was etched with a ferric chloride solution to obtain a single film of heat-resistant resin.

[0086] A single film of about 10 mg of the o...

manufacture example 1

[0119] Production example 1 (polymerization of heat-resistant resin B solution)

[0120]In the reaction kettle that has thermometer, dry nitrogen inlet, utilizes the heating · cooling device of warm water · cooling water, and stirring device, charge 75.7g (0.7mol) PDA, 60.1g (0.3 mol) DAE, after dissolving, add 176.5g (0.6mol) BPDA, 87.2g (0.4mol) PMDA, react at room temperature for 1 hour, then react at 60°C for 5 hours to obtain a 15% by weight polyamic acid resin solution (B-1).

manufacture example 2~7

[0121] Production examples 2 to 7 (polymerization of heat-resistant resin B solution)

[0122] According to changing the kind and charging amount of acid dianhydride and diamine as shown in Table 1, except that, carry out the operation similar to Manufacturing Example 1, obtain the polyamic acid resin solution of 15% by weight (B-2~ 7).

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

To provide an element-processing layered structure in which there is no generation of volatile compounds or occurrence of cracking in a substrate due to separation or the like during the steps for polishing the back surface and forming the back-surface circuits of a semiconductor circuit formation substrate, separation being possible in mild conditions at room temperature, and essentially no temporary adhesive remaining on the semiconductor circuit formation substrate side after separation. An element-processing layered structure in which an element-processing substrate is layered on a support substrate with temporary adhesive layers interposed therebetween, wherein the element-processing layered structure is characterized in that: the temporary adhesive layers are layered in the order of heat-resistant resin layer (A), heat-resistant resin layer (B), from the support substrate side; and the adhesive force between the heat-resistant resin layer (B) and the element-processing substrate is lower than the adhesive force between the heat-resistant resin layer (A) and the support substrate, and the adhesive force between the heat-resistant resin layer (B) and the heat-resistant resin layer (A).

Description

technical field [0001] The present invention relates to an adhesive for temporary bonding, a laminate for device processing using the same for a temporary adhesive layer, a method for manufacturing a laminate for device processing, and a thin device using the laminate for device processing In the production method, the adhesive for temporary bonding has excellent heat resistance, does not change in adhesive force even through the production process of semiconductor devices, image display devices, etc., and can be peeled off under mild conditions at room temperature. Background technique [0002] In recent years, the reduction in weight and thickness of semiconductor devices and image display devices has been progressing. In particular, in semiconductor devices, in order to achieve higher integration and higher density of semiconductor elements, a technology of connecting and stacking semiconductor chips through through silicon vias (TSV: Through Silicon Via) has been develop...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/02B32B7/04C08G73/10H01L21/304
CPCB32B7/12B32B27/08B32B2307/306B32B2457/20C08G73/1042C08G73/105C08G73/106C08G73/1082C09J179/08H01L21/6835H01L2221/68327H01L2221/6834H01L2221/68386
Inventor 渡边拓生李忠善富川真佐夫竹田清佳
Owner TORAY IND INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products