Raw material for high-speed growth of silicon carbide crystals and silicon carbide crystal growing method

Abstract

The invention relates to a raw material for high-speed growth of silicon carbide crystals and a silicon carbide crystal growing method, and belongs to the technical field of semiconductors. The raw material for high-speed growth of the silicon carbide crystals and the silicon carbide crystal high-speed growing method are provided for solving the problem that existing silicon carbide crystals are small in growing speed and low in efficiency. The raw material contains silicon carbide particles, the average particle size of the silicon carbide particles is smaller than 5 mum or at least two types of silicon carbide particles which are in different shapes and / or have different particle sizes are mixed to form a mixed raw material, and the raw material at last contains a type of silicon carbide particles with the average particle size smaller than 5 mum. The silicon carbide crystal growing method comprises the following steps: placing the raw material in a crucible; and heating the crucible and enabling the raw material in the crucible to be recrystallized after sublimating so as to obtain the silicon carbide crystals. The purpose of increasing sublimating speed and efficiency can be achieved.

Description

technical field [0001] The invention relates to a raw material for high-speed growth of silicon carbide crystals and a growth method of silicon carbide crystals, belonging to the technical field of semiconductors. Background technique [0002] Silicon carbide single crystal has unique characteristics such as large band gap, high breakdown electric field, large thermal conductivity, small dielectric constant, and stable physical and chemical properties. It is considered to be an ideal semiconductor for manufacturing optoelectronic devices, high-frequency high-power devices, etc. Material. [0003] Conventionally, as a method of producing silicon carbide crystals, a single crystal or polycrystal of silicon carbide is generally formed by sublimating and recrystallizing raw material silicon carbide powder under high temperature conditions, and growing on silicon carbide seed crystals. As we all know, silicon carbide powder as a raw material plays an important role in the speed ...

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Problems solved by technology

[0006] The purpose of the present invention for the high-speed growth of silicon carbide crystals is to use silicon carbide particles with an average particle size of less than 5 μm to make the raw material silicon carbide particles easy to suspend when the gas is introduced, so that in the overall sublimation process, there will be no If the bulk density is too large, the sublimation speed and efficiency will be reduced. If the particle size is too large, a gas with a higher pressure or a larger flow rate needs to be introduced during the growth process. Because the flow rate is too large, the upper part of the crucible will easily The gaseous silicon carbide is taken out of the crucible in large quantities, which will affect the speed and efficiency of sublimation, which is not conducive to the high-speed growth of silicon carbide crystals.

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