A stable high-conductivity cu-ge-fe ternary dilute alloy film and its preparation process

Abstract

The invention relates to a stable high-conductivity Cu-Ge-Fe ternary rare alloy film and a preparation technology thereof, and belongs to the field of novel materials. In the stable high-conductivity Cu-Ge-Fe ternary rare alloy film, the adding amount of the nonmetal component Ge with the large atomic radius is 5-35 times of that of the third component metal element Fe, and the total adding amount, by atomic percent, of Ge and Fe accounts for 0.32%-1.74%. The stable high-conductivity Cu-Ge-Fe ternary rare alloy film and the preparation technology thereof have the advantages that the content of the added elements is little, and therefore the self low electrical resistivity of a copper film can be kept; when solid-solution-state nonmetal Ge is added into Cu, the large atomic size determines that Ge is difficult to disperse in Cu, and it is beneficial for keeping stability of the overall structure; Ge and Fe are subjected to negative heat of mixing, by adding the Ge element to substituent Fe into Cu to increase the solid solubility of Fe in Cu, so that the ally film is in a solid-solution state; in addition, the adding amount of Ge is decreased by adding Fe, so that the electronic scattering effect caused by large atoms self is reduced to a great extent; accordingly, co-addition of the two elements is beneficial for stabilizing a Cu film and ensuring that the electrical resistivity of the Cu film is influenced least.

Description

technical field [0001] The invention relates to a stable high-conductivity Cu-Ge-Fe ternary dilute alloy film and a preparation process thereof, belonging to the field of new materials. Background technique [0002] Copper is commonly used in interconnect materials due to its low volume resistivity (1.75μΩ·cm) and strong migration resistance. Electronic devices using copper interconnection can meet the requirements of fast speed, high integration, large capacity, and long service life. However, in the application, Cu will inevitably contact the surrounding medium. The diffusion rate is large, and it is easy to enter the medium and become a deep-level acceptor impurity and cause the failure of electronic devices. For example, the diffusion rate of Cu in the Si matrix is ​​very fast, and the combination reaction between Cu-Si can occur at 200°C to form a high-resistance compound Cu 3 Si seriously affects the electrical properties of electronic devices. In order to overcome ...

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Problems solved by technology

[0004] At present, there are not many studies on the use of non-metallic elements such as Ge as additive elements to form solid solution alloy Cu thin films for Cu seed layer.

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