Microwave annealing device and method for repairing proton irradiation damage of inp-based hemt devices

Abstract

The invention discloses a microwave annealing device and a microwave annealing method for restoring InP base HEMT device proton irradiation damages. The microwave annealing device comprises an operation bench, a testing cavity disposed in the operation bench, a sample pedestal support disposed in the testing cavity and on the surface of the operation bench, a sample pedestal, a sample conveying channel connected with the testing cavity, a telescopic conveying rod disposed in the sample conveying channel, a vacuum drainage device, a charging device, a microwave generating device, and an infrared thermometer. According to the microwave annealing method, the proton irradiation of the InP base HEMT device can be carried out, and a defect characterization device is used to measure a plurality of performance characteristics and parameters of the InP base HEMT device after the proton irradiation, and the comparison with the plurality of performance characteristics and parameters of the InP base HEMT device after the microwave annealing processing can be carried out, and therefore the function of the microwave annealing processing of restoring the irradiation defect can be determined; by adopting the microwave annealing processing method, the defect of the semiconductor device structure can be reduced, and a certain degree of restoration of the electric characteristic of the semiconductor device can be realized.

Description

technical field [0001] The invention relates to the technical field of reliability of semiconductor devices and integrated circuits, in particular to a microwave annealing device and method for repairing proton irradiation damage of InP-based HEMT devices. Background technique [0002] With the rapid development of science and technology, application systems such as high-precision detection and high-speed data transmission have put forward higher and higher requirements for the operating frequency of microwave monolithic integrated circuits. The operating frequency of the core chip of the transceiver system has been increased from W-band to G-band, and even entered the THz field. The feature size of integrated circuits is decreasing year by year, and the corresponding manufacturing industry has gradually developed into the post-Moore era marked by the nanoscale. Compound semiconductor energy band engineering solutions have emerged as the times require and have become an impo...

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Problems solved by technology

Therefore, it transmits energy to the material system slowly, with low efficiency, poor repeatability, high annealing temperature, high requirements on the heat absorption of the material, and high heat treatment cost.

In addition, as the size of the device decreases, the size of the target area will also decrease accordingly, so it will become more and more difficult to control the target processing area during the annealing process

[0007] For InP-based HEMT devices, InP materials will decompose thermally above 350°C, forming In-rich rough surfaces and deteriorating contact characteristics; at the same time, F elements in the atmosphere at high temperatures diffuse rapidly in the barrier layer and combine with doped Si to form F-Si defects reduce the two-dimensional electron gas concentration and mobility; in addition, the stress generated between the epitaxial layers of the device at high temperature will also seriously affect the DC and high frequency characteristics of the device

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