High-voltage semiconductor device and manufacturing method thereof

Abstract

The invention provides a high-voltage semiconductor device and a manufacturing method thereof. The high-voltage semiconductor device comprises a base plate, an epitaxial layer, a gate structure, a source electrode region, and a drain electrode region, and a stacking structure, wherein the epitaxial layer is arranged on the base plate and is provided with a first conductive type; the gate structure is arranged on the epitaxial layer; the source electrode region and the drain electrode region are arranged in the epitaxial layer on two sides of the gate structure respectively; the stacking structure is arranged between the gate structure and the drain electrode region, wherein the stacking structure comprises a barrier layer, an insulating layer and a conducting layer, the insulating layer is arranged on the barrier layer, and the conducting layer is arranged on the insulating layer and is electrically connected to the source electrode region or the gate structure. According to the high-voltage semiconductor device and the manufacturing method thereof, through the stacking structure comprising the conducting layer, the electric field density of a passage in the epitaxial layer can be reduced, and then the on-resistance of the high-voltage semiconductor device is reduced. Moreover, an insulated lug arranged between the gate structure and the drain electrode region can reduce the on-resistance furthermore.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, and particularly relates to a high-voltage semiconductor device and a manufacturing method thereof. Background technique [0002] High-voltage semiconductor device technology is suitable for the field of high-voltage and high-power integrated circuits. Conventional high-voltage semiconductor devices, such as vertically diffused metal oxide semiconductor (VDMOS) transistors and horizontally diffused metal oxide semiconductor (LDMOS) transistors, are mainly used in the field of device applications above 18V. The advantage of high-voltage device technology is that it is cost-effective and easily compatible with other processes. It has been widely used in the fields of display driver IC components, power supplies, power management, communications, automotive electronics, or industrial control. [0003] High-voltage semiconductor devices use a gate voltage to create...

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a high-voltage semiconductor device and its manufacturing method to solve the problem of increasing the size of the device by extending the channel length of the transistor in order to prevent the breakdown effect between the source and the drain in the prior art The problem of increasing the chip area and increasing the on-resistance of the transistor

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