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Monocrystalline SiC and manufacturing method thereof

A production method and single crystal technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of expensive equipment, limited output, harsh conditions, etc., and achieve easy control of defects and high quality yield , the effect of simple equipment

Inactive Publication Date: 2016-04-20
段兴
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Problems solved by technology

[0002] At present, the known single crystal SiC is all produced by epitaxial growth method, the equipment is expensive and the conditions are harsh, resulting in high cost and strictly limited output; it can only be formed at one time, the defects cannot be compensated, and the quality is not easy to control; the size of the wafer is affected by many factors Restricted, hard to make bigger

Method used

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  • Monocrystalline SiC and manufacturing method thereof
  • Monocrystalline SiC and manufacturing method thereof

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Embodiment Construction

[0010] exist figure 1 In the first step, the SiC precursor tetraethyl silicate and sucrose are used as silicon and carbon sources, and the surfactant PVP is used as a soft template, or AAO, fiber film mold, etc., as a hard template, and a solvent is added. Through the principle of oriented attachment growth (oreintedattachment), grid-like, cluster-like, and film-like singles are formed on wires and surface substrates such as carbon fibers, carbon fiber precursor fibers, conductive metal wires, foils, other fibers, and film surface material templates. crystalline SiC, / or its composites; the second step is to dissolve the grid-like boundary or remove it at high temperature, and then in the solution of the precursor tetraethyl orthosilicate and sucrose, the solvothermal method is used to induce secondary compensation by electricity to fill Flat grid pores and defects, complete crystal single crystal SiC fibers, sheets, and films can be obtained by adjusting the template. The sec...

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Abstract

The invention relates to a monocrystalline SiC and a manufacturing method thereof. The monocrystalline SiC has complete monocrystalline SiC structural characteristics, can be used as a plane material, a film, and a linear material, is mainly composed of SiC, is prepared through combination, or is composed of pure monocrystalline SiC. A manufacturing method is also disclosed, and comprises two steps: generating latticed cluster liked monocrystalline SiC complex and generating secondary compensated monocrystalline SiC. The monocrystalline SiC has a complete monocrystalline structure characteristic, is mainly composed of SiC, is prepared through combination, or is composed of pure monocrystalline SiC. The equipment is simple, no special condition is needed, the cost is low, and the output is large. The secondary compensation can be performed, the defects can be controlled easily, the yield rate is high, the wafer size is not limited, the length is controllable, the generation is continuous, and the monocrystalline SiC can be massively produced.

Description

Technical field [0001] The present invention relates to a single crystal SiC and its manufacturing method, especially the single crystal SiC which is mainly composed of single crystal SiC or composed of pure single crystal SiC, which has a complete single crystal structure and can be used as a surface material, film and wire. Single crystal SiC and method of making the same. Background technique [0002] At present, the known single crystal SiC is all produced by epitaxial growth method, the equipment is expensive and the conditions are harsh, resulting in high cost and strictly limited output; it can only be formed at one time, the defects cannot be compensated, and the quality is not easy to control; the size of the wafer is affected by many factors Restricted, it is difficult to make it bigger. Contents of the invention [0003] In order to overcome the shortcomings of the existing single crystal SiC, the present invention provides a single crystal SiC and its manufact...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B7/14
Inventor 段兴
Owner 段兴
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