Modelling method for surface potential basis intensive model of III-V group HEMT (High Electron Mobility Transistor)
A modeling method and surface potential technology, applied in special data processing applications, instruments, electrical digital data processing, etc., can solve problems such as discontinuous segment points, charge equations that cannot be integrated, and nonlinear circuit simulations that cannot be used
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[0063] The present invention will be further tested, verified and analyzed below in conjunction with the accompanying drawings and specific examples.
[0064] The AlGaN / GaN HEMT device is an important representative of the III-V HEMT device. The present invention carries out an intensive model establishment and model parameter extraction for a depletion-mode AlGaN / GaN HEMT device with 2 gate fingers, a gate length of 0.25um, and a gate width of 10um. CLP Group provides die test data. Such as figure 1 As shown, the modeling method of the AlGaN / GaNHEMT surface potential basis intensive model includes the following steps;
[0065] Step 1. Establish an AlGaN / GaNHEMT surface potential basis intensive kernel model:
[0066] 1.1 Write the unique polarization and quantum effects of AlGaN / GaNHEMT devices into the two-dimensional Poisson equation, derive the surface potential equation of the AlGaN / GaNHEMT device, realize the characterization of different structures of the device, and ...
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