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Silicon micromechanical vibrating gyroscope of I-shaped structure

A technology of silicon micromachines and vibrating gyroscopes, applied in the direction of gyroscope effect for speed measurement, gyroscope/steering sensing equipment, instruments, etc., to reduce temperature errors, suppress interference signals, and increase support stiffness

Active Publication Date: 2016-04-06
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the structural scheme declared by this patent has the same technical problem as ZL200710133223.5 gyroscope

Method used

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  • Silicon micromechanical vibrating gyroscope of I-shaped structure
  • Silicon micromechanical vibrating gyroscope of I-shaped structure
  • Silicon micromechanical vibrating gyroscope of I-shaped structure

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Embodiment Construction

[0015] The silicon micromechanical vibrating gyro with I-shaped structure of the present invention is used to measure the measuring instrument perpendicular to the base level, and is composed of an upper layer of single crystal silicon, a middle layer of single crystal silicon, and a lower layer of single crystal silicon. The upper layer of single crystal silicon is arranged with The silicon micro-gyroscope packaging cover plate for signal input and output lines, the gyroscope mechanical structure is made on the middle layer of single crystal silicon wafer, the lower layer of single crystal silicon is the gyroscope substrate with a fixed base, and the upper layer of single crystal silicon package The cover plate and the lower single crystal substrate form a closed cavity; the mechanical structure of the middle single crystal silicon includes substructures, I-shaped frames, torsion bars, multi-fold beams and isolation structures, and the two substructures are arranged symmetrical...

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Abstract

The invention discloses a silicon micromechanical vibrating gyroscope of an I-shaped structure, which is used for measuring a measuring instrument vertical to the horizontal level of a base. The silicon micromechanical vibrating gyroscope is formed by upper-layer monocrystalline silicon, middle-layer monocrystalline silicon and lower-layer monocrystalline silicon, wherein the upper-layer monocrystalline silicon is a silicon micromachined gyroscope encapsulating cover plate with a signal input wire and a signal output wire; a gyroscope mechanical structure is formed on the middle-layer monocrystalline silicon; the lower-layer monocrystalline silicon is a gyroscope substrate provided with a fixed base; and the middle-layer monocrystalline silicon is sealed in a sealed cavity formed by the upper-layer monocrystalline silicon and the lower-layer monocrystalline silicon. The silicon micromechanical vibrating gyroscope is small in error, high in mechanical sensitivity, low in vibration sensitivity and low in temperature sensitivity, and can realize movement decoupling, violent vibration and detection output decoupling of a driving modal and a detection modal.

Description

technical field [0001] The invention belongs to micro-electro-mechanical systems and micro-inertia measurement technology, in particular to a silicon micro-mechanical vibrating gyroscope with an I-shaped structure. Background technique [0002] Silicon micromachined gyro is an inertial sensor that measures the rotational angular rate. It uses micromachining technology to realize structural processing, and can be fully integrated with the required electronic circuits on a silicon chip, so it has small size, low cost, and light weight. , high reliability and other advantages, it has important application value in the field of military and civilian dual-use. [0003] At present, the performance of silicon micromachined gyroscopes has been developed from the ordinary vehicle level to the level close to the tactical level (1° / h), but its performance is poor in applications in environments such as vibration and temperature, especially in vibration environments. The dual-mass tuni...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01C19/5621
CPCG01C19/5621G01C19/5747
Inventor 施芹裘安萍夏国明
Owner NANJING UNIV OF SCI & TECH
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