Substrate installation platform, plasma processing device, and operation method for plasma processing device

Abstract

The invention relates to a substrate installation platform, a plasma processing device, and an operation method for the plasma processing device. The device comprises a reaction cavity, and the lower part of the interior of the reaction cavity comprises a conductive substrate, a static chuck, a pallet, and a substrate. The static chuck is fixed on the conductive substrate, and the pallet is placed on the static chuck. The substrate is fixed in the pallet, and the pallet comprises a panel part and an upwards bulged part, wherein the diameter of the upper surface of the panel part is greater than the diameter of the substrate. The bulged part surrounds the panel part and the substrate on the panel part. The diameter of the static chuck is greater than the diameter of the substrate, and is less than or equal to the diameter of the pallet.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a substrate support plate in a plasma processing device and an operating method thereof. Background technique [0002] Such as figure 1 As shown, the plasma processing device includes a reaction chamber 10, the reaction chamber includes a base 33, and the base includes a lower electrode. Above the susceptor is an electrostatic chuck 34 on which the substrate 30 to be processed is placed, and a focus ring 36 surrounds the electrostatic chuck. A radio frequency power supply 35 with a lower frequency (such as 2Mhz-400Khz) is connected to the lower electrode 33 in the base through a matcher. The top of the reaction chamber also includes a gas distribution device 40, such as a gas shower head, or a nozzle for passing the reaction gas into the reaction chamber. The gas distribution device is connected to a gas source 20 through a flow diverter or switching valve....

AI Technical Summary

Problems solved by technology

This creates a pronounced temperature gradient on the edge of the substrate, resulting in a significantly different substrate treatment around the edge than in the center

The gap between the electrostatic chuck 34 and the focus ring 36 will form a channel, and part of the plasma will reach the bottom of the substrate along the channel to corrode the side of the electrostatic chuck and the organic adhesive layer 31 between the electrostatic chuck 34 and the base 33, which in turn can damage the electrostatic chuck or even render it useless

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