Method and system for brittle fracturing of brittle semiconductor materials

Abstract

The invention discloses a method and system for brittle fracturing of brittle semiconductor materials. The method includes: using a heating laser beam to rapidly heat the inside of the brittle semiconductor material to be cleaved, so that the inside of the brittle semiconductor material to be cleaved expands to form a pressure At the same time, the surface of the brittle semiconductor material to be split is rapidly cooled, so that the surface of the brittle semiconductor material to be split shrinks to form tensile stress, so that the brittle semiconductor material undergoes brittle fracture and forms a smooth incision. Through the present invention, the brittle semiconductor material can be processed perfectly, and compared with the traditional brittle semiconductor material processing method, it can obtain extremely high incision quality, maintain the bending strength of the brittle semiconductor material, and improve the brittle semiconductor material. Fragmentation efficiency.

Description

technical field [0001] The invention relates to the technical field of laser processing, in particular to a method and system for brittle fracturing of brittle semiconductor materials. Background technique [0002] The difference between brittle fracture and ductile fracture is mainly divided from the macroscopic characteristics, and the judgment basis is "whether there is obvious plastic deformation before fracture". Brittle fracture hardly produces plastic deformation before fracture. It is generally stipulated that when the reduction of area of ​​a smooth tensile specimen is less than 5%, it belongs to brittle fracture. The fracture is flat and bright, with metallic luster, and perpendicular to the normal stress. In ductile fracture, significant plastic deformation occurs before fracture, and with plastic deformation and energy absorption, the shape of the workpiece is necked, bent, and the section shrinks. [0003] For brittle semiconductor materials, taking silicon waf...

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Problems solved by technology

[0003] For brittle semiconductor materials, taking silicon wafer cutting as an example, the mainstream cutting technology still uses diamond blade cutting. This cutting method has disadvantages such as wide cutting slit width, low cutting efficiency, and high cost of consumables. Therefore, laser cutting wafers should become the mainstream. technology, but because laser cutting textures or laser cutting marks are left when laser cutting silicon wafers, there are actually a lot of micro-cracks and stress concentration hidden under these marks, and they also have a certain roughness. As time goes by, These cracks gradually spread to the middle of the circuit of the chip, causing the chip to be scrapped

In engineering, a three-point test or a four-point test method is used to measure whether and how much the flexural strength of the brittle material after cutting is reduced after the brittle material is cut by laser. The general laser cutting method causes the existence of many microcracks due to the cutting texture. , leading to a sharp decrease in the bending strength of brittle semiconductor materials after laser cutting, which affects the subsequent use of brittle semiconductor materials

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