Silicon oxide bonded silicon carbide material

Abstract

The invention belongs to the technical field of inorganic nonmetallic materials and discloses a silicon oxide bonded silicon carbide material. The silicon oxide bonded silicon carbide material is prepared from, by mass, 60-75% of silicon carbide particles, 18-30% of silicon carbide fine powder, 3-8% of silicon carbide micro powder, 1-3% of silica powder, and 0.3-1.5% of nano-silica, and the total mass percentage of the raw materials is 100%. Liquid phenolic resin serving as a binding agent is also added to the silicon oxide bonded silicon carbide material. The raw materials for preparing the silicon oxide bonded silicon carbide material are evenly mixed with liquid phenolic resin to generate pug, the pug is molded, dried and then sintered in a high-temperature kiln with the highest sintering temperature being 1350-1500 DEG C, then the product is cooled together with the kiln to be indoor temperature so that the silicon oxide bonded silicon carbide material can be obtained. The silicon oxide bonded silicon carbide material has the advantages of being high in purity, excellent in high-temperature performance and high in comprehensive performance.

Description

technical field [0001] The invention belongs to the technical field of inorganic non-metallic materials, and specifically relates to a silicon oxide-bonded silicon carbide material. The silicon oxide-bonded silicon carbide material can be used for kiln furniture, lining of aluminum electrolytic cells in the non-ferrous industry, lining of waste incinerators, etc. field. Background technique [0002] Silicon carbide refractories have high thermal conductivity, low thermal expansion coefficient, good shock resistance, high temperature strength, good chemical corrosion resistance, strong corrosion resistance to slag and zinc, aluminum, copper, lead and other melts, and good high temperature wear resistance. Advantages, are widely used in metallurgy, chemical industry, energy and other high-temperature industries. Since SiC is a compound mainly with covalent bonds, and the sintering temperature is above 2000°C, it is difficult to achieve dense sintering in general kilns. In or...

AI Technical Summary

Problems solved by technology

[0005] 2. Uneven distribution of fine powder and micro powder during the mud preparation process

The higher reactivity of silica micropowder makes it easy to combine silicon carbide to form higher strength, but its higher surface activity makes it easy to form agglomerates with each other, which makes it difficult to homogenize the mixture, resulting in material Inhomogeneous structure and unstable quality

Due to the limitation of impurities in silica powder, considering the performance of the material, the amount of silica powder added should not be too high, so the uniformity of its microstructure is relatively poor

[0006] 3. The adverse effect of residual silicon on the high temperature performance of silicon oxide bonded silicon carbide materials

[0007] 4. Adverse effects of impurities introduced by temporary binder

Taking calcium lignosulfonate, a temporary binder commonly used in refractory materials, as an example, its CaO content is about 8%. According to the calculation of 2% addition, it will increase the CaO content in the material by 0.16%, so that the high temperature performance of silicon carbide materials is obvious. reduce