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Preparation method for high-conductivity insulating composite material

An insulating composite material and high thermal conductivity technology, applied in the field of electronic materials, can solve the problems of product performance limitation, limited application scope, low thermal conductivity, etc., and achieve the effect of solving the matching problem of thermal conductivity and insulation performance

Active Publication Date: 2016-03-09
AKM ELECTRONICS INDAL PANYU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Conductive materials usually have good thermal conductivity, especially graphene, whose thermal conductivity is 5300W / m K, which is much higher than that of silver, copper, diamond and carbon nanotubes, but its conductivity limits the range of applications; inorganic nonmetals have excellent thermal conductivity and insulation at the same time, but their preparation is difficult, high cost, and poor bendability, which also limit their range of applications; high molecular polymers are easy to process, low in cost, and It has good toughness, but its thermal conductivity is very low. When it is applied as an electronic material, the performance of the product is also greatly limited.

Method used

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  • Preparation method for high-conductivity insulating composite material

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preparation example Construction

[0041] In order to solve the problems of the prior art, the present invention provides a method for preparing a high thermal conductivity insulating composite material, specifically, as figure 1 , figure 2 As shown, the preparation method roughly includes the following steps:

[0042] S1. Pre-treating the inorganic filler so that the polar silane group completely covers the surface of the inorganic filler to obtain a modified inorganic filler 13;

[0043] S2, modifying the surface of the graphene so that the polar silane group completely covers the surface of the graphene to obtain modified reduced graphene 12;

[0044] S3, dissolving the high molecular polymer 11 in advance, blending the high molecular polymer 11 with the modified inorganic filler 13 obtained in step S1, and the modified reduced graphene 12 obtained in step S2, and stirring evenly;

[0045] S4. Pre-cure and pre-form the material obtained by blending in step S3, and then perform curing and molding to obtain...

Embodiment 1

[0069] In this embodiment, aluminum nitride is selected as the inorganic filler, polyimide is selected as the polymer, and the high thermal conductivity insulating composite material is prepared according to the following steps:

[0070] S1. Pretreatment of aluminum nitride

[0071] (1) Weigh 10g of aluminum nitride powder, mix it with 100mL of absolute ethanol, and ultrasonically stir for 30min at 30-60°C to obtain an aluminum nitride suspension;

[0072] (2) Stir the aluminum nitride suspension at a temperature of 40-60 °C, add 0.15 g of silane coupling agent at the same time, continue stirring for 2-3 hours, take out the suspension, and use filtration or high-speed centrifugation for solid-liquid separation. After the obtained solid product is washed and dried, a modified aluminum nitride powder is obtained.

[0073] S2, carry out surface modification to graphene

[0074] (1) Weigh 1g of nano-graphene oxide (GO), dissolve it in 1L of deionized water, and stir it ultrasoni...

Embodiment 2

[0080] In this embodiment, aluminum nitride is still selected as the inorganic filler, but the composition of epoxy resin and curing agent is selected as the high molecular polymer, and the high thermal conductivity insulating composite material is prepared according to the following steps:

[0081] Step S1, step S2 are exactly the same as Embodiment 1, and will not be repeated;

[0082] S3. Weigh 2.6g epoxy resin and 2.5g curing agent, and use ethyl acetate to dissolve the epoxy resin and curing agent respectively, and dissolve the modified aluminum nitride powder obtained in step S1 in the epoxy resin In the solution, ultrasonically stir at a rate of 2000 rpm for 30 min at 30-60 °C, add the modified RGO obtained in step S2, continue to stir at a rate of 2000 rpm for 30 min, then add a curing agent, and then Min speed stirring 10 ~ 30min.

[0083]S4. Dry the material obtained in step S3 in an oven at 100° C. for 3 to 30 minutes for pre-curing and preforming treatment, and th...

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Abstract

The invention relates to a preparation method for a high-conductivity insulating composite material. The preparation method is characterized by comprising the following steps: pretreating an inorganic filling material to allow polar silane groups to totally cover the surface of the inorganic filling material so as to obtain a modified inorganic filling material; carrying out surface modification on graphene to allow the polar silane groups to totally cover the surface of the graphene so as to obtain modified reduced graphene; dissolving a high-molecular polymer in advance, then blending the dissolved high-molecular polymer with the obtained modified inorganic filling material and modified reduced graphene and carrying out uniform mixing under stirring; and subjecting a mixture obtained in the previous step to precuring and performing and then to curing and molding so as to obtain the high-conductivity insulating composite material. The composite material prepared by using the preparation method provided by the invention has effectively improved thermal conductivity and has good insulating properties at the same time.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, and in particular relates to a preparation method of a high thermal conductivity insulating composite material. Background technique [0002] With the rapid development of the current information industry, electronic products are showing the development trend of lightness, miniaturization, digitalization, multi-function and networking. Various new electronic materials are urgently needed to meet the design and manufacturing requirements of electronic components. For example, the three-generation semiconductor technology revolution represented by materials such as silicon carbide and gallium nitride has greatly promoted the prosperity and development of industries such as LED lighting and power electronics. However, this type of electronic device often has high power and serious heat generation. , and the integrated design requires more compactness, so the heat dissipation of electron...

Claims

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Application Information

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IPC IPC(8): C08L63/00C08L27/16C08L79/08C08K9/06C08K3/04C08K3/28
Inventor 张仕通王锋伟崔成强
Owner AKM ELECTRONICS INDAL PANYU
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