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A kind of photodetector and its preparation method and application

A photodetector and photodetection technology, which is applied in the manufacture/processing of thermoelectric devices and the material of the junction lead wires of thermoelectric devices, can solve the problems of low detection ability of thermal detectors, and achieve a wide range of detection light intensity and integrated Simple, easy-to-integrate effects

Active Publication Date: 2017-11-21
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But these two infrared light detectors have their own defects, such as the detection ability of thermal detectors is relatively low, and high-sensitivity photonic infrared detectors generally need to work at low temperatures

Method used

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  • A kind of photodetector and its preparation method and application
  • A kind of photodetector and its preparation method and application
  • A kind of photodetector and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] 1) After the glass sheet is ultrasonically rinsed with secondary water, ethanol, acetone, blown dry with nitrogen, and cleaned with plasma, it is soaked in a mixture of n-hexane and octadecyltrichlorosilane with a volume ratio of 100:1. in the solution, take it out after 10 minutes, and obtain a glass sheet with a hydrophobic surface, that is, a substrate;

[0045] 2) Utilize n-hexane, absolute ethanol, chloroform to sonicate, rinse, and dry the glass sheet with nitrogen, stick a hollow strip mask, and treat it with a 250-watt ultraviolet ozone cleaning machine for 12 minutes to obtain a hydrophilic strip pattern, the structure will be The active material poly[Cu x (Cu-ett)] or poly[K x (Ni-ett)] (x is 1-2, n is 100-10000, A is Cu or K) is dropped on the glass sheet to form a strip-shaped film, that is, the active layer;

[0046] 3) Place the device obtained in step 2) in a vacuum coating machine at a vacuum degree of 7×10 -6 Under the condition of Pa, on the active ...

Embodiment 2

[0053] Embodiment 2, to the detection of 808 nanometer infrared laser

[0054] 1) Utilize the photothermoelectric device obtained in embodiment 1, with poly[Cu x (Cu-ett)] is the relationship between the voltage generated by the detection of the active layer and the optical density of infrared light: when 800 nanometers of infrared light is hit at the interface between the gold electrode and the active layer, the generated voltage is linear with the increase in optical density enhanced ( image 3 ), and for poly[Cu x (Cu-ett)] material, when the optical density reaches 17 W / cm 2 At this time, the generated voltage is as high as 10 millivolts, realizing a large voltage output.

[0055] 2) Utilize the photothermoelectric device obtained in embodiment 1, with poly[K x (Ni-ett)] replacing poly[Cu x (Cu-ett)] is the relationship between the voltage generated by the detection of the active layer and the optical density of infrared light: when 800 nanometers of infrared light is...

Embodiment 3

[0058] 1) After the glass sheet is ultrasonically rinsed with secondary water, ethanol and acetone, blown dry with nitrogen, and cleaned with plasma, it is soaked in a solution with a volume ratio of n-hexane:octadecyltrichlorosilane=100:1 In the process, take it out after 10 minutes to obtain a glass sheet with a hydrophobic surface, that is, a substrate;

[0059] 2) Utilize n-hexane, absolute ethanol, chloroform to sonicate, rinse, and dry the glass sheet with nitrogen, stick a hollow strip mask, and treat it with a 250-watt ultraviolet ozone cleaning machine for 12 minutes to obtain a hydrophilic strip pattern, the structure will be The active material poly[Cu x (Cu-ett)] (x is 1-2, n is 100-10000, A is Cu) drops on the glass sheet to form Figure 5 The thin film in the stripe pattern shown, i.e. the active layer;

[0060] 3) Place the device obtained in step 2) in a vacuum coating machine at a vacuum degree of 7×10 -6 Under the condition of Pa, on the active layer obt...

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Abstract

The invention discloses an optical detector and a producing method and an application thereof. A photo-thermal electric device includes a substrate, an active layer, and electrodes; wherein the active layer is positioned on the substrate; the number of the electrodes at least is two, and the electrodes are positioned on the active layer; the area of each electrode is smaller than that of the active layer, and the electrodes are not contacted each other. According to the invention, based on the principle that organic thermoelectric materials can absorb infrared light, the photo-thermal electric device can be produced by adoption of a type of organic thermoelectric material, and the photo-thermal electric device can effectively detect the infrared light at the room temperature; in addition, the photo-thermal electric device can achieve large area and high density integration, can generate power by utilizing sunlight, and has an important application value.

Description

technical field [0001] The invention belongs to the field of infrared light detection and photothermoelectric power generation, and specifically relates to a photodetector and its preparation method and application. Background technique [0002] Infrared light refers to electromagnetic waves with a wavelength between visible light and microwaves. The presence of infrared light radiation can be detected with the help of infrared detectors. At present, infrared detectors are widely used in military, national defense and civilian fields such as missile guidance and anti-theft alarm. Common infrared light detectors are mainly divided into two types according to the mechanism: thermal infrared detectors and photonic infrared detectors. However, these two types of infrared light detectors have their own defects, such as the relatively low detection ability of thermal detectors, and high-sensitivity photonic infrared detectors generally need to work at low temperatures. Therefore...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/24H01L35/34
Inventor 狄重安黄大真焦飞张凤娇臧亚萍徐伟朱道本
Owner INST OF CHEM CHINESE ACAD OF SCI
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