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A light-emitting diode with high luminous efficiency

A technology of light-emitting diodes and p-electrodes, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as palliatives rather than root causes, and achieve the effects of improving luminous efficiency, reducing dislocation density, and improving the quality of epitaxial crystals

Active Publication Date: 2017-10-31
XIAMEN CHANGELIGHT CO LTD
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] However, the above technologies are all palliatives, not the root cause. As the application of LED luminous power needs to be further improved, the above technologies will face technical bottlenecks again under the use of higher working current.

Method used

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  • A light-emitting diode with high luminous efficiency
  • A light-emitting diode with high luminous efficiency
  • A light-emitting diode with high luminous efficiency

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Experimental program
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Embodiment Construction

[0013] One, the manufacture method step of the present invention is as follows:

[0014] 1. Provide an epitaxial substrate. After standard masking and photolithography process, ICP etching is used to form different surface topography on the substrate surface. The PSS topography of the substrate surface topography in the p-electrode setting area is higher than that in other areas It is large and presents a certain gradual decreasing law. like figure 2 shown.

[0015] 2. Use MOCVD epitaxial equipment to sequentially form a buffer layer, an unintentionally doped layer, an n-type conductive layer (composed of four n-type conductive layers and three layers of current blocking layers), an active region, and an electron blocking layer on the epitaxial substrate. layer, p-type conductive layer, p-type ohmic contact layer.

[0016] 3. The size of the PSS surface topography passing through the substrate gradually increases in the area where the p-electrode is set, and a dislocation ...

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Abstract

The invention discloses a light-emitting diode with high luminous efficiency, and relates to the technical field of light-emitting diode production. A substrate bottom surface facing a buffering layer is provided with PSS surface patterns with different shapes and appearances. A dislocation blocking layer is disposed below a p electrode, is disposed below an ITO transparent conducting layer in a p electrode arrangement region and extends to a part of an n-type conducting layer. A dislocation line dense region is disposed below the dislocation blocking layer, is disposed below a part of the n-type conducting layer in the p electrode arrangement region, and extends to an unintentional doped layer. A dislocation collection region is disposed below the dislocation blocking layer, thereby reducing the dislocation density of a light-emitting region, improving the quality of epitaxial crystal of the light-emitting region, weakens the Efficiency-Droop effect under a working current, and improving the reliability of the light-emitting diode. The dislocation blocking layer achieves a purpose of improving the current extension effect of the p electrode, and effectively improves the luminous efficiency of the light-emitting diode.

Description

technical field [0001] The invention relates to the technical field of production of light-emitting diodes. Background technique [0002] In recent years, light-emitting diodes have developed rapidly, which is closely related to the development of semiconductor optoelectronic technology and new lighting source technology. With the continuous expansion of LED application fields, people have put forward higher and higher requirements for the performance of LED chips. It is necessary to continuously improve the luminous power of LEDs. [0003] With the widespread application of high-power LEDs, the luminous efficiency and reliability of LEDs are reduced due to inherent defects. Improving the epitaxial crystal quality of LEDs and designing new chip structures has become an important way to solve this problem. At present, the internal quantum efficiency under high current is mainly improved by improving the quality of the epitaxial crystal or using better current expansion mat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/64H01L33/52H01L33/44
CPCH01L33/005H01L33/44H01L33/52H01L33/642
Inventor 林志伟陈凯轩张永卓祥景姜伟方天足陈亮
Owner XIAMEN CHANGELIGHT CO LTD
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