Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Magnetic temperature sensitive material of manganese doped terbium iron oxide and preparation method of monocrystal and polycrystal of magnetic temperature sensitive material

A technology of temperature-sensitive materials and oxides, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve problems such as limiting practical application value and narrow range of critical temperature points, and achieve good application value and sensitivity high effect

Inactive Publication Date: 2016-02-17
SHANGHAI UNIV
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The transition critical temperature range of this magnetic transition is narrow, which limits the practical application value of this kind of material to a certain extent.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetic temperature sensitive material of manganese doped terbium iron oxide and preparation method of monocrystal and polycrystal of magnetic temperature sensitive material
  • Magnetic temperature sensitive material of manganese doped terbium iron oxide and preparation method of monocrystal and polycrystal of magnetic temperature sensitive material
  • Magnetic temperature sensitive material of manganese doped terbium iron oxide and preparation method of monocrystal and polycrystal of magnetic temperature sensitive material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] In the present embodiment, TbFe, a magnetic temperature-sensitive material of manganese-doped terbium iron oxide 0.4 mn 0.6 o 3 Polycrystalline preparation method using Tb 4 o 7 , MnO 2 and Fe 2 o 3 As a raw material, according to the raw material ratio of Tb:Fe:Mn:O in the atomic molar ratio of 1:0.4:0.6:3, TbFe was synthesized by solid-state reaction method 0.4 mn 0.6 o 3 polycrystalline material.

[0023] In this example, the preparation of TbFe 0.4 mn 0.6 o 3 The specific steps for the synthesis of polycrystalline materials are:

[0024] a. Tb with a purity of 99.99% 4 o 7 , MnO 2 and Fe 2 o 3 Weigh according to the raw material ratio of Tb:Fe:Mn:O atomic molar ratio of 1:0.0.4:0.6:3, grind for 8 hours and mix evenly, pre-calcine at 1000°C for 24 hours to obtain polycrystalline powder;

[0025] b. Put the polycrystalline material powder prepared in the step a into a mold, press it into a disc with a diameter of 25mm under a pressure of 20MP, and si...

Embodiment 2

[0029] This embodiment is basically the same as Embodiment 1, especially in that:

[0030] In the present embodiment, TbFe, a magnetic temperature-sensitive material of manganese-doped terbium iron oxide 0.75 mn 0.25 o 3 Polycrystalline preparation method using Tb 4 o 7 , MnO 2 and Fe 2 o 3 As a raw material, according to the raw material ratio of Tb:Fe:Mn:O in the atomic molar ratio of 1:0.75:0.25:3, TbFe was synthesized by solid-state reaction method 0.75 mn 0.25 o 3 sheet of polycrystalline material; then the TbFe 0.75 mn 0.25 o 3 The polycrystalline material sheet is ground into powder, then molded into a rod shape with a diameter of about 7.5mm, hung in the optical floating zone furnace, vacuumed and introduced with argon, turned on the focusing lamp and adjusted the power of the bulb to heat up, and set the initial up and down rod rotation Speed, when the power reaches a certain value, the top of the rod shows signs of melting, continue to increase the power ...

Embodiment 3

[0033] This embodiment is basically the same as the previous embodiment, and the special features are:

[0034] In the present embodiment, TbFe, a magnetic temperature-sensitive material of manganese-doped terbium iron oxide 0.2 mn 0.8 o 3 Polycrystalline preparation method using Tb 4 o 7 , MnO 2 and Fe 2 o 3 As a raw material, according to the raw material ratio of Tb:Fe:Mn:O in the atomic molar ratio of 1:0.2:0.8:3, TbFe was synthesized by solid-state reaction method 0.2 mn 0.8 o 3 polycrystalline material.

[0035] A small piece of the polycrystalline material prepared in this example was cut, and the single-phase property of the obtained sample was verified by X-ray diffraction.

[0036] The polycrystalline material prepared in this example was cut into small pieces, weighed, and the magnetic properties were tested with a comprehensive physical property measuring instrument (PPMS), and its spin reorientation temperature was obtained, and the spin reorientation te...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a magnetic temperature sensitive material of manganese doped terbium iron oxide and a preparation method of monocrystal and polycrystal of the magnetic temperature sensitive material. Tb4O7, MnO2 and Fe2O3 powder are synthesized into a TbFe1-xMnxO3 polycrystalline material by using a solid reaction process, and the polycrystalline material grows into a monocrystal material by using an optical floating zone furnace method. According to the magnetic temperature sensitive material, an external magnetic field is not needed, the magnetic transition temperature sensitivity is high, the magnetic transition critical temperature can be adjusted and can reach the room temperature, and the magnetic temperature sensitive material is applied to magnetic temperature sensitive devices. According to the magnetic temperature sensitive material, different materials of which the magnetic transition critical temperature is between -264.65 DEG C and 25.85 DEG C can be obtained by changing the proportion, the magnetic transition speed is higher than the traditional magnetic transition speed near the Curie temperature due to the phase change, spontaneous magnetization occurs at more than critical temperature, and therefore, the external magnetic field is not needed to induce before and after transition. The material is better than a traditional magnetic sensitive temperature device material depending on the magnetic transition near the Curie temperature.

Description

technical field [0001] The invention relates to a magnetic material, in particular to a ferrite temperature-sensitive material, which is applied in the technical fields of temperature-sensitive functional materials and temperature-sensitive electronic devices. Background technique [0002] The existing magnetic temperature sensitive switches mainly use soft magnetic ferrite materials as temperature sensitive magnetic materials, which are mainly used in magnetic sensors and electronic devices, especially in communication, home appliances, automobiles, industry, medical treatment, security and other fields. This traditional ferrite temperature-sensitive material is based on the obvious ferromagnetic-paramagnetic transition of the magnetic material near the Curie temperature. The transition critical temperature range of this magnetic transition is narrow, which limits the practical application value of this kind of material to a certain extent. In addition, this magnetic tempe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/22C30B13/00C30B28/02H01F1/34
Inventor 方依霏张金仓崔晓鹏康健曹世勋
Owner SHANGHAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products