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High-heat-conduction ceramic substrate material and preparing method thereof

A technology of high thermal conductivity ceramics and substrates, applied in the field of ceramic materials, can solve the problems of mismatch of thermal expansion coefficient of silicon wafers, low thermal conductivity, etc., and achieve the effect of good matching degree and good comprehensive performance.

Inactive Publication Date: 2016-01-13
SUZHOU KUANWEN ELECTRONICS SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved is: to solve the problems of low thermal conductivity of traditional alumina ceramics, the thermal expansion coefficient does not match the wafer silicon, etc., to provide a high thermal conductivity ceramic substrate material and its preparation method

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A high thermal conductivity ceramic substrate material is prepared from the following raw materials in parts by weight:

[0022] 82 parts of alumina powder, 7 parts of silicon carbide, 6 parts of mullite, 4 parts of bentonite, 3 parts of carbon fiber, 5 parts of fluorapatite, 3 parts of vanadium nitride, 4 parts of yttrium oxide, 11 parts of binder and 35 parts of solvent. Wherein, the alumina powder is α-Al 2 o 3 Nano powder; the binder is a composite binder composed of paraffin wax, polyvinyl alcohol and carboxymethyl cellulose in a mass ratio of 3:2:1; the solvent is deionized water, dehydrated alcohol and isopropanol The volume ratio is 3:1:0.2 ternary compound.

[0023] The preparation method of the high thermal conductivity ceramic substrate material comprises the following preparation steps:

[0024] Put the aluminum oxide powder, silicon carbide, mullite, bentonite, carbon fiber, fluoroapatite, vanadium nitride and yttrium oxide in the above parts by weight ...

Embodiment 2

[0029] A high thermal conductivity ceramic substrate material is prepared from the following raw materials in parts by weight:

[0030] 90 parts of alumina powder, 18 parts of silicon carbide, 15 parts of mullite, 14 parts of bentonite, 8 parts of carbon fiber, 16 parts of fluorapatite, 13 parts of vanadium nitride, 10 parts of yttrium oxide, 20 parts of binder and 48 parts of solvent. Wherein, the alumina powder is α-Al 2 o 3 Nano powder; the binder is a composite binder composed of paraffin wax, polyvinyl alcohol and carboxymethyl cellulose in a mass ratio of 3:2:1; the solvent is deionized water, dehydrated alcohol and isopropanol The volume ratio is 3:1:0.2 ternary compound.

[0031] The preparation method of the high thermal conductivity ceramic substrate material comprises the following preparation steps:

[0032] Put the aluminum oxide powder, silicon carbide, mullite, bentonite, carbon fiber, fluoroapatite, vanadium nitride and yttrium oxide in the above parts by w...

Embodiment 3

[0037] A high thermal conductivity ceramic substrate material is prepared from the following raw materials in parts by weight:

[0038] 86 parts of alumina powder, 12 parts of silicon carbide, 10 parts of mullite, 9 parts of bentonite, 6 parts of carbon fiber, 11 parts of fluorapatite, 8 parts of vanadium nitride, 7 parts of yttrium oxide, 15 parts of binder and 41 parts of solvent. Wherein, the alumina powder is α-Al 2 o 3 Nano powder; the binder is a composite binder composed of paraffin wax, polyvinyl alcohol and carboxymethyl cellulose in a mass ratio of 3:2:1; the solvent is deionized water, dehydrated alcohol and isopropanol The volume ratio is 3:1:0.2 ternary compound.

[0039] The preparation method of the high thermal conductivity ceramic substrate material comprises the following preparation steps:

[0040] Put the aluminum oxide powder, silicon carbide, mullite, bentonite, carbon fiber, fluoroapatite, vanadium nitride and yttrium oxide in the above parts by weig...

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Abstract

The invention discloses a high-heat-conduction ceramic substrate material. The high-heat-conduction ceramic substrate material is prepared from, by weight, 82 parts to 90 parts of aluminum oxide powder, 7 parts to 18 parts of silicon carbide, 6 parts to 15 parts of mullite, 4 parts to 14 parts of bentonite, 3 parts to 8 parts of carbon fibers, 5 parts to 16 parts of fluorapatite, 3 parts to 13 parts of vanadium nitride, 4 parts to 10 parts of yttrium oxide, 11 parts to 20 parts of binding agents and 35 parts to 48 parts of solvents. The invention further discloses a preparing method of the high-heat-conduction ceramic substrate material. The heat conductivity coefficient of the ceramic substrate material prepared with the preparing method is larger than 1.8 W / m.K, the coefficient of thermal expansion is 5.23*10<-6> / K to 6.08*10<-6> / K and is close to the coefficient of thermal expansion of wafer silicon, and the matching degree is good; in addition, the breaking strength of the prepared ceramic substrate material is larger than or equal to 0.7 Mpa, and good comprehensive performance is shown.

Description

technical field [0001] The invention belongs to the field of ceramic materials, and in particular relates to a high thermal conductivity ceramic substrate material and a preparation method thereof. Background technique [0002] Common ceramic substrates are divided into alumina type, beryllium oxide type and aluminum nitride type. Among them, beryllium oxide has ultra-high thermal conductivity, but its development is limited due to its toxicity. Aluminum nitride has high thermal conductivity and an expansion coefficient that matches silicon, but if there is a very thin oxide layer on the surface of aluminum nitride, its thermal conductivity will be affected, and the requirements for the preparation process are relatively high. In addition, the price of aluminum nitride is generally On the high side, it also restricts its development. Alumina ceramic substrate is the most commonly used substrate material in the field of LEDs. Compared with most other oxide ceramics in terms...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/10C04B35/622
Inventor 翁宇飞张其笑
Owner SUZHOU KUANWEN ELECTRONICS SCI & TECH
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