Metalorganic chemical vapor deposition (MOCVD) equipment and method for removing parasitic particles thereof

Abstract

The invention provides metalorganic chemical vapor deposition (MOCVD) equipment and a method for removing parasitic particles thereof. Spray headers are arranged on the top of a reaction cavity, and organic metal gas, hydride gas, carrier gas and cleaning gas are conveyed into the reaction cavity. The organic metal gas and the hydride gas which have just been ejected are separated in the middle area of the bottom face of each spray header. The cleaning gas is delivered in the edge area of the bottom face of each spray header for decomposing the organic metal gas and the hydride gas to pre-react the formed parasitic particles. By means of the MOCVD equipment and the method for removing the parasitic particles thereof, pollution to the equipment inside the reaction cavity by the parasitic particles can be effectively reduced, the growth quality of thin films is guaranteed, and the growth rate of the thin films is increased.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an MOCVD device and a method for removing parasitic particles therein. Background technique [0002] At present, in the metal-organic chemical vapor deposition method (hereinafter referred to as MOCVD), the gas of II or III metal-organic compounds and the hydride gas containing IV or V elements are introduced into the reaction chamber of the MOCVD equipment, so that the mixture of the two When the gas flows through the surface of the substrate in the reaction chamber, a thermal decomposition reaction can occur on the surface of the substrate, so that epitaxial growth forms a compound single crystal film. [0003] Such as figure 1 Shown is a schematic diagram of an existing MOCVD device. A shower head 70 is provided on the top of the reaction chamber 60, and two reaction source gases can be introduced into the reaction chamber 60, one of which is an organometallic gas (...

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Problems solved by technology

[0004] However, in the above-mentioned equipment, the two-way reaction source gas has already started to perform pre-reaction TMGa+NH before being delivered to the surface of the substrate 62 3 →GaN+CH 4 ,TMAl+NH 3 →AlN+CH 4 , the parasitic particles 80 forming GaN and AlN adhere to the inner wall of the reaction chamber 60 or the inner side of the confinement ring 64, and the lower surface of the shower head 70, so the process must be often stopped to clean these devices in the reaction chamber, reducing production Efficiency; the parasitic particles 80 will also randomly scatter on the substrate 62, affecting the growth form of the film on the surface of the device and affecting the quality of the product; in addition, a part of the organic metal gas is not used to grow the film but is consumed in forming the above parasitic particles 80 process, so that the film growth rate of the device decreases

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