Ultra-high-voltage level shifting circuit for IGBT (Insulated Gate Bipolar Translator) driving chip

Abstract

The invention belongs to the technical field of electronic circuits, and in particular relates to an ultra-high-voltage level shifting circuit for an IGBT (Insulated Gate Bipolar Translator) driving chip. The ultra-high-voltage level shifting circuit disclosed by the invention comprises a pulse circuit generation module, a pulse signal shaping module, an ultra-high-voltage level shifting module and an RS trigger, wherein the pulse signal shaping module and the ultra-high-voltage level shifting module are each composed of two sub-modules same in structure; each sub-module forms a circuit; one control chain is used for generating a pulse signal chain for turning on a high-side IGBT; and the other control chain is used for generating a pulse signal chain for turning off the high-side IGBT. The ultra-high-voltage level shifting circuit disclosed by the invention has the benefits that: the turn-on speed of a NLDMOS (N-channel Laterally Diffused Metal Oxide Semiconductor) is reduced while the level shifting power consumption is reduced; dV / dt and di / dt of the NLDMOS are reduced; and the reliability of the NLDMOS is increased.

Description

technical field [0001] The invention belongs to the technical field of electronic circuits, and in particular relates to an ultra-high voltage level shift circuit for an IGBT drive chip. Background technique [0002] IGBT drive is now very important in variable frequency motor drive, automotive xenon lamp drive and other fields. Whether the IGBT can work normally determines the safety and reliability of the system. Since the IGBT needs to work under the condition of UHV, so Then the reliability of the entire IGBT drive is largely determined by the reliability of the UHV level shift circuit. [0003] Traditional IGBT driver chips, because the design of the UHV level shift circuit in the internal key part is relatively simple, especially the design of UHV NLDMOS reliability has not been improved to a certain extent, the traditional UHV level shift circuit , some have no feedback, and directly control the final stable state of the NLDMOS by controlling the highest potential of...

AI Technical Summary

Problems solved by technology

[0003] Traditional IGBT driver chips, because the design of the UHV level shift circuit in the internal key part is relatively simple, especially the design of UHV NLDMOS reliability has not been improved to a certain extent, the traditional UHV level shift circuit , some have no feedback, and directly control the final stable state of the NLDMOS by controlling the highest potential of the gate, and some use a simple feedback method, that is, the source of the NLDMOS is connected in series with a feedback resistor, and these level shift circuits may generate during the switching process Larger dv / dt, di / dt, larger dv / dt, di / dt will have a very large impact on NLDMOS

The reduction in the reliability of NLDMOS will greatly affect the reliability of the entire UHV level shift circuit, thereby affecting the reliability of the system

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