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Double-barrier structure based magnetic memory device

A magnetic storage device, double potential barrier technology, applied in the field of magnetic storage devices, can solve problems such as breakdown, resistance area vector product is difficult to reduce, magnetic tunnel junction damage, etc., to achieve ultra-low power consumption and the effect of mitigating interference

Inactive Publication Date: 2015-12-16
BEIHANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is worth noting that increasing the number of barrier layers makes it difficult to reduce the resistance area vector product, especially when the technology node is scaled down to 1X nanometers, the high voltage generated by the write current will cause damage or even breakdown of the magnetic tunnel junction

Method used

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Embodiment Construction

[0046] The disclosed embodiment of the present invention is a magnetic storage device based on a double potential barrier structure, which mainly uses the spin-orbit moment method to write data. This type of magnetic memory device mainly includes a magnetic tunnel junction and a bottom metal wire. Both sides of the free layer constituting the magnetic tunnel junction contain a double barrier structure, and its main feature is to enhance the vertical magnetic anisotropy or tunneling magnetoresistance ratio of the magnetic tunnel junction. , combined with the bottom metal wire to form a spin-orbit moment-based three-port device.

[0047] figure 1 Shown is a magnetic storage device structure based on a double barrier structure based on some embodiments.

[0048] The bottom metal wire 10 is a write wire, and its material is selected from, but not limited to, β-tungsten (β-W), β-tantalum (β-Ta), platinum (Pt), platinum manganese (PtMn), etc. Horn heavy metals, the thickness range...

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Abstract

A double-barrier structure based magnetic memory device is disclosed. The double-barrier structure is used to strengthen perpendicular magnetic anisotropy or tunnel magnetoresistance ratio of a magnetic tunnel junction; meanwhile, a three-port device based on a spin orbit torque is formed by combination of metal wire at the bottom; the double-barrier structure of the magnetic memory device comprises a metal oxide barrier layer, a free layer formed by ferromagnetic metal and the other metal oxide barrier layer; a reference layer formed by the ferromagnetic metal and a covering layer formed by non-magnetic metal are deposited on the top of the structure in sequence; the top of the structure is connected with a peripheral circuit through a metal electrode; and the wire at the bottom is formed by metal materials with a larger hall angle and used for data writing. By introducing the double-barrier structure into the magnetic memory device based on the spin orbit torque, the adverse effect on the data writing caused by too high resistance can be effectively avoided, and the thermal stability and the tunnel magnetoresistance ratio of the device are improved; and the good property of the STT-MRAM is maintained by the device, and the double-barrier structure based magnetic memory device is quite suitable for industrial production.

Description

technical field [0001] The invention relates to a magnetic storage device based on a double barrier structure, which is mainly composed of a magnetic tunnel junction (Magnetic TunnelJunction, MTJ) including a double barrier structure and bottom and top metal wires, and uses the correlation mechanism of the spin-orbit moment to realize data Writing belongs to the technical field of nonvolatile magnetic memory. Background technique [0002] Spin transfer torque magnetic random access memory (STT-MRAM) based on spin transfer torque effect has attracted extensive attention from academia and industry because of its non-volatility, strong durability, low power consumption, and fast read and write speed. The basic constituent unit of STT-MRAM is the magnetic tunnel junction. Its effective structure generally includes a reference layer composed of ferromagnetic metal, a barrier layer composed of metal oxide and a free layer composed of ferromagnetic metal. Currently, cobalt is commo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/00H01L43/08G11C11/00G11C11/16H10N50/10
CPCG11C11/1659G11C11/161G11C11/18G11C11/1675
Inventor 王梦醒赵巍胜
Owner BEIHANG UNIV
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