Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor structure forming method

A semiconductor and gas technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of semiconductor structure yield to be improved, semiconductor structure performance, etc., to avoid undercutting, optimize performance, and avoid undercutting problem-solving effect

Active Publication Date: 2015-11-25
SEMICON MFG INT (SHANGHAI) CORP
View PDF3 Cites 30 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, when low-k materials are used as the dielectric layer of the semiconductor structure, the performance of the formed semiconductor structure is still poor, and the yield of the semiconductor structure needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure forming method
  • Semiconductor structure forming method
  • Semiconductor structure forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] It can be seen from the background art that the performance of the semiconductor structure formed in the prior art needs to be improved, and the yield rate of the semiconductor structure is poor.

[0034] Please refer to figure 1 The step of forming the semiconductor structure includes: providing a substrate 100; forming a dielectric layer 101 on the surface of the substrate 100; forming a patterned hard mask layer 102 on the surface of the dielectric layer 101; The film layer 102 is used as a mask to etch the dielectric layer 101 to form an opening 103 in the dielectric layer 101 ; the subsequent steps include filling the opening 103 with a metal material.

[0035] In order to reduce the RC delay of the semiconductor structure, a low-k dielectric material or an ultra-low-k dielectric material is usually used as the material of the dielectric 101, and the low-k dielectric material or the ultra-low-k dielectric material usually contains a methyl group (-CH 3 ), that is,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a semiconductor structure. A semiconductor structure forming method comprises the following steps of providing a substrate; forming a carbon-containing dielectric layer on the surface of the substrate; forming a carbon-rich protecting layer on the surface of the carbon-containing dielectric layer, wherein the carbon atom concentration in the carbon-rich protecting layer material is greater than that in the carbon-containing dielectric layer material; forming a graphical hard mask layer on the surface of the carbon-rich protecting layer; and with the graphical hard mask layer as a mask, etching the carbon-rich protecting layer and the carbon-containing dielectric layer to form an opening, wherein the opening bottom makes the substrate surface exposed; and forming a metal layer filling the opening. An undercut phenomenon is prevented. The quality of the formed metal layer is improved. The performance of the semiconductor structure is further optimized.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the continuous progress of the VLSI process technology, the feature size of the semiconductor structure is continuously reduced, and the chip area is continuously increased. The delay time of the semiconductor structure can be compared with the device gate delay time. People are faced with the problem of how to overcome the significant increase in RC (R refers to resistance, C refers to capacitance) delay due to the rapid increase in connection length. In particular, due to the increasing influence of the capacitance between metal wiring lines, the performance of the device is greatly reduced, which has become a key restrictive factor for the further development of the semiconductor industry. [0003] The parasitic capacitance and interconnection resistance between the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L21/311
Inventor 邓浩
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com