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Transverse current regulator diode and manufacturing method thereof

A technology of constant current diode and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high voltage and low saturation, and achieve low pinch-off voltage, constant current, and easy pinch-off. Effect

Inactive Publication Date: 2015-11-11
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the diode structure of this patent, the current increases significantly with the increase of voltage, that is, the saturation is not high. In addition, the device requires a large voltage to reach the saturation current.

Method used

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  • Transverse current regulator diode and manufacturing method thereof
  • Transverse current regulator diode and manufacturing method thereof
  • Transverse current regulator diode and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0038] Such as Figure 9 As shown, the structure of this example is mainly, in such as figure 2 On the basis of the shown structure of the present invention, a P-type lightly doped region 15 is added in the second N-type well region 14; the P-type lightly doped region 15 is located in the third N-type heavily doped region 13 and the fourth Between the N-type heavily doped regions 3 , the upper surface has a metal cathode connected to the cathode on the upper surface of the third N-type heavily doped region 13 . The added resistance structure of this structure has a voltage drop at both ends of the resistance during the working process of the device, which makes it easier to pinch off the device, that is, the voltage at which the device is saturated can be reduced. As the voltage at both ends of the device increases, the voltage at both ends of the resistor introduced in this patent increases, which can increase the constant flow rate of the current, and at the same time, the...

Embodiment 2

[0040] Such as Figure 10 As shown, the structure of this example is mainly, and figure 2 The difference in the shown structure is that a passivation layer 13 is added on the upper surface of the oxide layer 2, and a polycrystalline resistor 15 is set in the passivation layer 13 to replace the second N-type well region 14; the polycrystalline resistor 15 is far away from the first N-type well region. One side of the upper surface of the N-type well region 8 has a metal cathode, and the other side has a metal electrode connected to the upper surface of the first N-type heavily doped region 4; this example is another form of increasing resistance, wherein example 1 adopts Well resistor, this example adopts polycrystalline resistor. Using this example, in addition to the advantages of Example 1, it also has better temperature characteristics of polycrystalline resistor.

Embodiment 3

[0042] Such as Figure 11 As shown, the structure of this example is a single-layer metal structure on the basis of Example 2. The polycrystalline resistor is deposited on the pre-oxidized layer 16, and the passivation layer 2 is deposited on this basis, and then the through hole is formed to deposit metal. In addition to the advantages of Example 2, the use of this example can reduce the number of process steps, reduce the number of mask versions, and save costs by using a single layer of metal.

[0043] The invention provides a method for manufacturing a lateral constant current diode, which is characterized in that it comprises the following steps:

[0044] Step 1: Implanting N-type semiconductor impurities into the upper layer of the P-type substrate 9 by using an ion implantation process, and forming a first N-type well region 8 and a second N-type well region 14 on both sides of the upper layer of the P-type substrate 9;

[0045] Step 2: Implanting P-type semiconductor...

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Abstract

The invention belongs to the semiconductor power device technical field and relates to a transverse current regulator diode and a manufacturing method thereof. The transverse current regulator diode is characterized in that a negative feedback resistor is led into the source of an ordinary current regulator diode, so that the performance of the current regulator diode can be higher. The resistor led into the ordinary current regulator diode has a certain voltage drop when working, so that a channel will be pinched off more easily, and the current regulator diode can quickly enter a constant current region, and therefore, the breakdown voltage of the transverse current regulator diode can be effectively improved, and the transverse current regulator diode can have low pinch-off voltage, and the constant current of the transverse current regulator diode can be effectively improved, and the effective operating voltage range of the transverse current regulator diode can be effectively extended. The manufacturing method of the invention is especially suitable for transverse current regulator diodes.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and in particular relates to a lateral constant current diode and a manufacturing method thereof. Background technique [0002] The constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source protects the entire circuit, even if the voltage is unstable or the load resistance changes greatly, it can ensure the stability of the supply current. In recent years, a constant current diode CRD (Current Regulator Diodes) has appeared on the market, that is, diodes are used as constant current sources to replace transistors, Zener tubes, resistors and other components of ordinary constant current sources. Constant current diodes have a large output current and have been made To a constant current from several milliamps to tens of milliamperes, it can directly drive the load, simplify the circuit ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
CPCH01L29/861H01L29/0684H01L29/6609
Inventor 乔明张康代刚何逸涛于亮亮张晓菲
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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