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Transverse constant current diode

A constant current diode, horizontal technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of low breakdown voltage, and achieve the effect of improving breakdown voltage and easy pinch off

Pending Publication Date: 2019-01-04
乐山尚鼎科技有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] What the present invention aims to solve is to propose a lateral constant current diode for the problem of low breakdown voltage of current constant current diodes.

Method used

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  • Transverse constant current diode

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Embodiment Construction

[0008] Such as figure 1 As shown, a lateral constant current diode of the present invention includes a P-type substrate 9, a cathode 1 and an anode 11; one side of the upper layer of the P-type substrate 9 has a first P-type heavily doped region 3, and the The other side of the upper layer of the P-type substrate has an N-type well region 8; the lower surface of the P-type substrate 9 has a cathode 1, and its upper surface has an oxide layer 2; the upper layer of the N-type well region 8 is close to the first P One side of the N-type heavily doped region 3 has a first N-type heavily doped region 4, and the side of the upper layer of the N-type well region 8 far away from the first P-type heavily doped region 3 has a second N-type heavily doped region 7. The upper surface of the second N-type heavily doped region 7 has an anode 11, and the anode 11 extends along the upper surface of the oxide layer 2 to the side close to the first P-type heavily doped region 3 to form an anode ...

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Abstract

The invention belongs to the field of semiconductors, in particular to a transverse constant current diode. According to the transverse constant current diode, by improving the well region of conventional diodes, the conventional P well is arranged as a well region formed by overlapping a second P-type heavily doped region and a P-type lightly doped region, so that the surface electric field can be adjusted through the lightly doped P-type region, the N-type well region can be depleted, the breakdown voltage can be increased, more holes can be introduced into the lightly doped P-type region, the concentration of the N-type well region can be correspondingly increased, and the constant current of the transverse constant current diode can be improved; and by shortening the channel length ofthe heavily doped P-type region, the constant current and breakdown voltage can be improved.

Description

technical field [0001] The invention belongs to the field of semiconductors, and in particular relates to a lateral constant current diode. Background technique [0002] Diode is a commonly used electronic equipment and device, which is widely used in electronic circuits. At present, constant current diodes are often used as constant current sources to replace ordinary constant current sources composed of multiple components such as transistors, Zener tubes and resistors. At present, the output current of constant current diodes is between several milliamperes and tens of milliamperes, which can be Directly driving the load realizes the purpose of simplifying the circuit structure, reducing the volume and improving the reliability of the device. In addition, the peripheral circuit of the constant current diode is very simple and easy to use, and is widely used in automatic control, instrumentation, protection circuits and other fields. The current high breakdown voltage of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/861
CPCH01L29/06H01L29/0615H01L29/861
Inventor 尚帝潘伟涂家欣
Owner 乐山尚鼎科技有限责任公司
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