A method for analyzing minority carrier transport in spatial single-junction solar cells

A technology for minority carriers and solar cells, which is applied in the fields of electrical digital data processing, special data processing applications, instruments, etc., and can solve problems such as carrier transport properties and solar cell radiation damage

Inactive Publication Date: 2017-08-18
HARBIN NORMAL UNIVERSITY
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Problems solved by technology

[0003] The purpose of the present invention is to solve the problem of how the internal radiation microscopic defects of the solar cell affect the carrier transport properties under the irradiation of charged particles in space, and then reveal the radiation damage mechanism of the solar cell. Methods of Minority Carrier Transport

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  • A method for analyzing minority carrier transport in spatial single-junction solar cells
  • A method for analyzing minority carrier transport in spatial single-junction solar cells
  • A method for analyzing minority carrier transport in spatial single-junction solar cells

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specific Embodiment approach 1

[0021] Embodiment 1: A method for analyzing minority carrier transport in a spatial single-junction solar cell according to this embodiment is specifically prepared according to the following steps:

[0022] Step 1. Establish a mathematical model of short-circuit current degradation of solar cells based on the carrier transport model of semiconductor materials under the irradiation of space charged particles and the energy band model of solar cells:

[0023]

[0024] In the formula, A=qαF(1-R)exp(-αx j ), q is the electron quantity, R is the reflectivity, F(1-R) ​​is the total incident flux when the reflectivity of the incident light is R, α is the absorption coefficient, x j is the junction depth of the solar cell; L 0 is the diffusion length of minority carriers before irradiation, Φ is the fluence of irradiated particles, K L is the minority carrier diffusion length damage coefficient; e is the natural exponent; L 0 is the diffusion length of the minority carrier befo...

specific Embodiment approach 2

[0035] Specific embodiment two: the difference between this embodiment and specific embodiment one is: the electron fluence selection method of charged particle irradiation in step two is:

[0036] (1) Due to the damage effect of space solar cells under electron irradiation, there is an energy threshold for atomic displacement, so the electron energy of electron irradiation is greater than 200keV, and the incident electron energy of electron irradiation is selected from 4 to 6 energy values;

[0037] (2) According to the parameters of common experimental equipment, select electron energies of 1, 2, 4 and 10 MeV for reference; the selection of electron fluence should be based on the degradation range of battery electrical parameters, and the degradation range of the maximum power of the battery is required to reach Below 75% before irradiation, the selected electron fluence value is more than 4. Other steps and parameters are the same as those in Embodiment 1.

specific Embodiment approach 3

[0038] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the method for selecting the proton fluence of charged particle irradiation in step 2 is:

[0039] (1) Since the degradation of electrical parameters of solar cells under the irradiation of protons less than 200keV is closely related to the energy of incident protons; For the energy values ​​of protons in the emission area, space charge area and base area of ​​the battery, select 3 to 5 protons with different energies;

[0040](2) The degradation range of electrical parameters of solar cells under proton irradiation greater than 200keV decreases with the increase of incident proton energy; according to the specific parameters of the experimental equipment, 3 to 5 kinds of proton energy values ​​with an energy interval of 1 to 3 MeV can be selected; The selection of proton fluence should be based on the degradation range of battery electrical parameters. It is required that the degradation...

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Abstract

A method for analyzing the minority carrier transport of a space single-junction solar cell, the invention relates to a method for analyzing the minority carrier transport. The invention solves the problem of how the internal irradiation microscopic defects of solar cells affect the carrier transport properties under the irradiation of charged particles in space, and then reveals the radiation damage mechanism of solar cells, and proposes a method for analyzing the minority carriers of single-junction solar cells in space method of transport mechanism. The method is to obtain the normalized short-circuit current degradation model after irradiation through step 1; step 2, obtain the short-circuit current degradation law of solar cells under the irradiation of charged particles through the equivalent simulation test on the ground in the space radiation environment; step 3, obtain the minority carrier Diffusion length damage coefficient; step 4, obtaining the basic law of minority carrier diffusion length changing with incident particle fluence; step 5, obtaining the basic law of battery minority carrier diffusion length changing with incident particle energy and other steps. The invention is applied to the field of radiation damage effect and mechanism of space solar cells.

Description

technical field [0001] The invention relates to a method for analyzing the minority carrier transport mechanism of a space single-junction solar cell. Background technique [0002] Spacecraft will experience complex and harsh space radiation environment during its in-orbit service, and space solar cells, as the main power supply of spacecraft, must suffer from the radiation of space charged particles. The irradiation microscopic defects generated inside the battery change the transport properties of the carriers, resulting in significant degradation or even failure of the electrical parameters of the solar cell. Exploring the internal physical mechanism of radiation damage of space solar cells has become an important content of the study of solar cell radiation damage effects, and the key to revealing the internal physical mechanism of space solar cell radiation damage is to analyze the basic laws of carrier transport inside solar cells . Contents of the invention [000...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F19/00
Inventor 胡建民王月媛张喜田盛延辉齐佳红崔海欣
Owner HARBIN NORMAL UNIVERSITY
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