A Method for Analyzing Majority Carrier Transport in Spatial Single Junction Solar Cells

A majority carrier and solar cell technology, which is applied in the field of analyzing the majority carrier transport of space single-junction solar cells, and can solve the problem that the change rule of the battery carrier transport properties cannot be given.

Inactive Publication Date: 2017-12-15
HARBIN NORMAL UNIVERSITY
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  • Abstract
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  • Claims
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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the prior art cannot provide the change law of the carrier transport properties inside the battery under the irradiation of space charged particles, and propose a method for analyzing the majority carrier transport of space single-junction solar cells Methods

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  • A Method for Analyzing Majority Carrier Transport in Spatial Single Junction Solar Cells
  • A Method for Analyzing Majority Carrier Transport in Spatial Single Junction Solar Cells
  • A Method for Analyzing Majority Carrier Transport in Spatial Single Junction Solar Cells

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specific Embodiment approach 1

[0017] Embodiment 1: A method for analyzing the majority carrier transport of a spatial single-junction solar cell in this embodiment is specifically prepared according to the following steps:

[0018] Step 1. Establish a solar cell open circuit voltage degradation model based on the carrier transport model of the semiconductor material under the irradiation of space charged particles and the solar cell energy band model;

[0019] Step 2. Establish the basic experimental law of solar cell open-circuit voltage degradation; obtain the law of solar cell open-circuit voltage degradation under charged particle irradiation through the ground equivalent simulation test in space radiation environment; among them, the law of solar cell open-circuit voltage degradation under charged particle irradiation Including solar cell open circuit voltage degradation law under different energy electron irradiation and solar cell open circuit voltage degradation law under different energy proton irr...

specific Embodiment approach 2

[0025] Embodiment 2: The difference between this embodiment and Embodiment 1 is that in step 1, the solar cell open circuit voltage degradation model is established based on the carrier transport model of the semiconductor material under the irradiation of space charged particles and the solar cell energy band model. The process is:

[0026] Based on the carrier transport model of semiconductor materials under the irradiation of space charged particles and the energy band model of solar cells, the open circuit voltage degradation model of solar cells is established:

[0027]

[0028] Before the charged particle irradiation, when the charged particle irradiation fluence Φ=0, the built-in voltage is Then the normalized open circuit voltage degradation model

[0029]

[0030] Equation (2) is consistent with the engineering application model of solar cells in form, where V oc0 Indicates the open circuit voltage of the solar cell before the irradiation of space charged par...

specific Embodiment approach 3

[0031] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that in Step 2, the open-circuit voltage degradation law of the solar cell under electron irradiation with different energies is as follows:

[0032] (1) Due to the damage effect of space solar cells under electron irradiation, there is an energy threshold for atomic displacement, so the electron energy of electron irradiation is greater than 200keV, and the incident electron energy of electron irradiation requires selecting 4 to 6 energy values;

[0033] (2) According to the parameters of common experimental equipment, select electron energies of 1, 2, 4 and 10 MeV for reference; the selection of electron fluence should be based on the degradation range of battery electrical parameters, and the degradation range of the maximum power of the battery is required to reach the radiation level. Below 75% of the previous irradiation, the selected electron fluence value is more than 4. Other steps an...

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Abstract

The invention relates to a method for analyzing the majority carrier transport of a space single-junction solar cell, and the invention relates to a method for analyzing the majority carrier transport. The invention aims to solve the problem that the prior art cannot provide the change law of the carrier transport properties inside the battery under the irradiation of space charged particles. In the present invention, step 1 is to establish a solar cell open-circuit voltage degradation model; step 2 is to establish the basic experimental law of solar cell open-circuit voltage degradation; and the solar cell open-circuit voltage degradation law under the irradiation of charged particles is obtained through the ground equivalent simulation test in a space radiation environment ; Step three, get the carrier removal rate RC according to the multi-carrier concentration damage coefficient αn; Step four, establish the basic rule of the multi-carrier concentration change according to the carrier removal rate RC; Step five, get the multi-carrier concentration of the battery with the incident particle energy The basic law of change and other steps are realized. The invention is applied to the field of radiation damage effect and mechanism of space solar cells.

Description

technical field [0001] The invention relates to a method for analyzing the transport of majority carriers, in particular to a method for analyzing the transport of majority carriers in a space single-junction solar cell. Background technique [0002] As the main power source of the spacecraft, the space solar cell is exposed to the outer space, and irradiated by space charged particles to produce irradiation defects inside it. Microscopic defects become traps for majority carriers and recombination centers for minority carriers, thereby changing the transport mechanism of carriers inside the battery and causing significant degradation or even failure of the electrical parameters of the solar cell. Studying the microscopic mechanism of radiation damage of space solar cells is of great significance for optimizing the design parameters of solar cells and improving their radiation resistance. [0003] A lot of work has been done on the degradation law of solar cell electrical p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
Inventor 王月媛胡建民齐佳红盛延辉崔海欣
Owner HARBIN NORMAL UNIVERSITY
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