Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Growth method for ZnO nanotube array

A nanotube array and growth method technology, applied in nanotechnology, metal material coating process, etc., to achieve the effects of convenient large-scale growth, simple operation and low cost

Inactive Publication Date: 2015-11-04
CHANGAN UNIV
View PDF2 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, the research on nanomaterials has made considerable progress, but how to effectively control the morphology and properties of nanomaterials still needs further research

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Growth method for ZnO nanotube array
  • Growth method for ZnO nanotube array
  • Growth method for ZnO nanotube array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] The specific steps for preparing ZnO nanotube arrays in this embodiment are as follows:

[0033] Step 1: Dissolve NaOH completely in a certain amount of deionized water, and adjust the pH of the NaOH solution to 14;

[0034] Step 2: transfer the prepared NaOH solution to a polytetrafluoroethylene reactor;

[0035] Step 3: Put the zinc sheet in 5% dilute hydrochloric acid for 10 seconds to remove the surface oxide layer, take it out and rinse it with deionized water three times repeatedly, insert the treated Zn sheet with a size of 1cm*1cm into the bottom of the reaction kettle, (zinc sheet flat Put it on the bottom of the reactor, put a zinc sheet in each reactor, and completely submerge in the NaOH solution) to seal the reactor;

[0036] Step 4: Put the sealed reactor into a drying oven at 150°C for 15 hours, then cool the reactor at room temperature, and take out the Zn sheet substrate;

[0037] Step 5: Wash the zinc flake substrate in step 4 three times with deioni...

Embodiment 2

[0044] Embodiment two: comparative example

[0045] Step 1: Dissolve NaOH completely in a certain amount of deionized water, and after sufficient magnetic stirring, adjust the pH of the NaOH solution to 14

[0046] Step 2: transfer the NaOH solution prepared in step 1 to a polytetrafluoroethylene reactor;

[0047] Step 3: Insert the treated Zn sheet with a size of 1cm*1cm into the bottom of the reaction kettle, put a zinc sheet in each reaction kettle, completely immerse in the NaOH solution, and seal the reaction kettle;

[0048] Step 4: Put the sealed reaction kettle into a drying oven at 80°C for 24 hours, then cool the reaction kettle at room temperature, and take out the Zn sheet substrate;

[0049] Step 5: Wash the zinc flake substrate in step 4 three times with deionized water, and dry it in a drying oven at 70°C.

[0050] The same Hitachi, S-570 electron microscope is used to scan the material prepared in Example 2 to obtain the scanning electron micrograph. Figure...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a growth method for a ZnO nanotube array. The method includes the steps that under the alkaline condition, the ZnO nanotube array is prepared through a hydrothermal synthesis method with a Zn piece as a substrate and a reaction source; and according to the formation of the ZnO nanotube array, ZnO nanometer pieces are firstly formed on the substrate and then grow into nanometer sticks, the centers of the nanometer sticks are eroded, and finally, the nanometer sticks are eroded into nanotubes. The hydrothermal method is low in growth temperature and cost, easy to operate and beneficial to large-scale growth; the controllable growth of the ZnO nanotube array can be successfully achieved by only regulating the growth time; and hope is brought to the low-cost large-scale production technology meeting the development requirement of novel devices and industries, and an effective backup method is provided for the size-controllable growth of other nanometer materials.

Description

technical field [0001] The invention belongs to the field of materials, and in particular relates to a growth method of a ZnO nanotube array. Background technique [0002] Nanomaterials are new materials developed in the early 1980s. They have unique properties that traditional materials do not have in terms of magnetism, optics, electricity, and catalysis. They will certainly play a very important role in future economic and social development. It has broad application prospects and is known as a new material across the century, which has attracted great attention from the scientific and business circles. In particular, the research on the optical properties of nanomaterials has attracted widespread attention from scientists at home and abroad. [0003] As a new third-generation semiconductor material, ZnO has become one of the research hotspots in the field of semiconductor materials. The bandgap of ZnO at room temperature is about 3.37eV. It is an important wide bandgap...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C22/60B82Y40/00
Inventor 郑佳红牛世峰管科杰
Owner CHANGAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com