Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Wide-spectrum flexible photoelectric detector and making method thereof

A technology of a photoelectric detector and a manufacturing method, applied in the field of flexible detection, can solve the problems of difficult to achieve ultra-fast broadband absorption, inability to meet the requirements, and achieve the effects of high photoelectric response speed, easy portability and strong plasticity

Inactive Publication Date: 2015-10-21
SHANGHAI UNIVERSITY OF ELECTRIC POWER
View PDF5 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The spectral range and detection bandwidth of traditional silicon-based and gallium-arsenide-based photodetectors are limited by their energy bands and carrier mobility, and it is difficult to achieve ultrafast broadband absorption photodetection, that is, traditional photodetectors cannot Satisfies some applications that have strict requirements on device performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wide-spectrum flexible photoelectric detector and making method thereof
  • Wide-spectrum flexible photoelectric detector and making method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] Embodiments and various features and advantageous details hereof will be more fully explained with reference to the non-limiting examples illustrated in the drawings and detailed in the following description, with reference to the embodiments illustrated below with reference to specific examples. Descriptions of well-known components and processing techniques are omitted so as not to unnecessarily obscure the embodiments herein. In fabricating the structure, conventional processes well known in the semiconductor process can be used. The examples used herein are merely to aid in understanding the manner in which the embodiments herein may be practiced, and to further enable those skilled in the art to practice the embodiments herein. Thus, the examples herein should not be construed as limiting the scope of the embodiments herein.

[0042] It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a wide-spectrum flexible photoelectric detector and a making method thereof. The detector sequentially comprises, from top to bottom, a flexible substrate layer, a metal electrode layer grown on the flexible substrate layer, a dielectric layer covering the metal electrode layer, a graphene layer grown on or transferred to the dielectric layer, and a first metal electrode and a second metal electrode which are arranged at the two ends of the graphene layer respectively, wherein the metal electrode layer is a gate electrode, the first metal electrode is a source electrode, and the second metal electrode is a drain electrode. The change in light current between the source and drain electrodes caused by photo-induced carriers in graphene can be detected quickly. As the band gap width of graphene is zero, the wide-spectrum flexible photoelectric detector has high electron mobility and low resistivity. By adopting the detector of the invention, wide-spectrum and quick-response photoelectric detection can be realized. As the photoelectric detector adopts a flexible substrate, the shape of the photoelectric detector can be bent and stretched to realize flexible detection. The wide-spectrum flexible photoelectric detector has wide application prospect.

Description

technical field [0001] The invention relates to the technical field of flexible detection, in particular to a wide-spectrum flexible photodetector and a manufacturing method thereof. Background technique [0002] For photodetectors, the detection spectrum width and response speed are important parameters to measure its performance. The spectral range and detection bandwidth of traditional silicon-based and gallium-arsenide-based photodetectors are limited by their energy bands and carrier mobility, and it is difficult to achieve ultrafast broadband absorption photodetection, that is, traditional photodetectors cannot Satisfies some applications that have strict requirements on device performance. [0003] Compared with the preparation materials of traditional photodetectors, graphene has excellent optical and electrical properties. In the range of visible light, single-layer graphene can transmit about 97.7% of incident light; graphene has excellent electrical conductivity...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/42H01L51/00
CPCH10K77/111H10K30/65Y02E10/549Y02P70/50
Inventor 汤乃云
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com