A single sulfur source temperature control process to improve the uniformity of molybdenum disulfide thin film growth

Abstract

The invention discloses an independent sulfur temperature-control technique for enhancing growth uniformity of a molybdenum disulfide film, which comprises the following steps: polishing a stainless steel material bottom, putting the stainless steel material bottle outside a pipe furnace, and communicating an argon input / output pipe with a pipe furnace input pipe; putting sulfur powder in the material bottle; wrapping a tracing belt on the periphery of the material bottle, and connecting with a touch screen; inputting the material bottle target temperature and heating time, heating the pipe furnace to the preset temperature, heating the material bottle to the preset temperature, introducing Ar gas into the material bottle, and carrying out molybdenum disulfide film growth; and after the growth finishes, cooling to room temperature, taking out the sample, and observing the molybdenum disulfide film surface uniformity. The independent sulfur source temperature-control technique is utilized to implement accurate control on the sulfur source temperature and steam pressure in the molybdenum disulfide film growth process, thereby preventing the molybdenum trioxide from being previously vulcanized in the traditional chemical vapor deposition process due to the previous evaporation, enhancing the controllability in the molybdenum disulfide film growth process and further enhancing the uniformity of the molybdenum disulfide film.

Description

technical field [0001] The invention relates to a preparation process of a molybdenum disulfide film material, in particular to a single sulfur source temperature control process for improving the growth uniformity of a molybdenum disulfide film. Background technique [0002] Molybdenum disulfide is a new type of two-dimensional semiconductor material. Monolayer molybdenum disulfide is a semiconductor material with a direct band gap. Compared with traditional silicon materials, it has a smaller volume. The field based on molybdenum disulfide Effect transistors have ultra-low static power consumption, and can effectively suppress the short-channel effect faced in the process of device size reduction, and have broad application prospects in integrated circuits and other fields. At present, the growth of molybdenum disulfide thin film materials is mainly carried out on sapphire substrates by chemical vapor deposition. During the growth process, molybdenum disulfide is usually p...

AI Technical Summary

Problems solved by technology

[0003] Aiming at the problem that the sulfidation time of molybdenum trioxide cannot be precisely controlled in the process of growing molybdenum disulfide on the sapphire substrate by the current chemical vapor deposition method, the present invention provides a single sulfur compound that improves the growth uniformity of the molybdenum disulfide film. source temperature control process

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