Gallium Nitride-based Low Leakage Current Fixed Beam Switching Differential Amplifier

Abstract

The invention discloses a gallium nitride-based low current leakage fixed beam switch differential amplifier. The gallium nitride-based low current leakage fixed beam switch differential amplifier has the obvious advantages that the volume is small, the integration is easy, and the switching speed is fast. A traditional MESFET is substituted by an MESFET with a fixed beam switch, the fixed beam switch of an N type MESFET used in the gallium nitride-based low current leakage fixed beam switch differential amplifier is suspended above a grid of the MESFET, the Schottky contact is formed between the grid of the MESFET and a substrate, a depletion layer is formed in the substrate below the grid, the pull-down voltage of the fixed beam switch is designed to be equal to the threshold voltage of the MESFET, when the loaded voltage between the fixed beam switch and the pull-down electrode is larger than the threshold voltage of the MESFET, the fixed beam is pulled down to be closely attached to the grid, the width of a depletion region in a channel region of the MESFET is reduced, when the loaded voltage between the fixed beam switch and the pull-down electrode is smaller than the threshold voltage of the MESFET, the fixed beam can not be pulled down, the MESFET can not be in breakover, therefore, the grid current leakage can not exist, and the power consumption of the differential amplifier is reduced.

Description

technical field [0001] The invention provides a gallium nitride-based low-leakage current solid-supported beam switch MESFET (metal-semiconductor field-effect transistor) differential amplifier, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] With the rapid development of wireless communication technology, traditional silicon-based devices can no longer meet the requirements of high frequency, high efficiency and high temperature resistance, so various new devices and semiconductor materials are constantly being proposed. Transistors made of gallium nitride materials have high electron mobility, strong radiation resistance, and a large operating temperature range. GaN FETs can be used in high frequency and ultra high frequency amplifier circuits. Nowadays, the size of transistors has developed to the nanometer level, and the integration degree of the corresponding integrated circuit unit area is still continuously impro...

AI Technical Summary

Problems solved by technology

Nowadays, the size of transistors has developed to the nanometer level, and the integration degree of the corresponding integrated circuit unit area is still continuously improving, and the functions of the chip are becoming more and more complex, showing a state of digital-analog hybrid, and the processing speed of the chip is getting higher and higher. ; Followed by the problem of power consumption of the integrated circuit, and excessive power consumption will make the chip overheat, and the operating characteristics of the transistor will be affected by the temperature and change, so the overheated chip temperature will not only reduce the life of the chip, And it will affect the stability of the chip

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