Longitudinal short-opening grid channel-type HEMT device and preparation method thereof
A grid and vertical technology, which is applied in the field of vertical short-open gate channel HEMT devices and their preparation, can solve the problems of increased device on-resistance, increased electron scattering, and reduced on-current, achieving conduction Effects of reduced resistance, reduced channel resistance, and short open channel
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Embodiment 1
[0050] figure 2 It is a schematic structural diagram of a vertical short open gate channel type HEMT device provided by an embodiment of the present invention. Such as figure 2 As shown, the vertical short open gate channel type HEMT device provided by the embodiment of the present invention includes:
[0051] substrate1;
[0052] a buffer layer 2 on the substrate 1;
[0053] a first GaN layer 3 on the buffer layer 2, the side of the first GaN layer 3 facing away from the buffer layer 2 has a groove;
[0054] The second GaN layer 6 and the second barrier layer 7 embedded in the groove in sequence, wherein the second GaN layer 6 and the second barrier layer 7 form a heterojunction, the interface of which forms a heterointerface, and the heterojunction High density 2DEG at the lateral interface of ;
[0055] The first barrier layer 4 located on the first GaN layer 3 except for the groove, wherein the first GaN layer 3 and the first barrier layer 4 form a heterojunction, a...
Embodiment 2
[0066] Figure 4 It is a flow chart for realizing the fabrication method of the vertical short open gate channel type HEMT device provided by the embodiment of the present invention. Such as Figure 4 As shown, the preparation method of the vertical short open gate channel type HEMT device provided by the embodiment of the present invention includes:
[0067] Step 101, forming a laminated structure sequentially composed of a substrate, a buffer layer, a first GaN layer and a first barrier layer.
[0068] Figure 5a It is a structural diagram corresponding to this step of the method for manufacturing a vertically short open gate channel type HEMT device provided by an embodiment of the present invention. refer to Figure 5a , forming a laminated structure consisting of the substrate 1 , the buffer layer 2 , the first GaN layer 3 and the first barrier layer 4 in sequence. The specific process is: providing a substrate 1 ; forming a buffer layer 2 on the substrate 1 ; formin...
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