A kind of preparation method of ultrafast flashing zno film

Abstract

A method for preparing an ultra-fast flashing ZnO thin film of the present invention comprises a step of acid-treating a single-crystal silicon wafer, measuring concentrated sulfuric acid and concentrated phosphoric acid, mixing the concentrated sulfuric acid and concentrated phosphoric acid, heating, and putting the single-crystal silicon wafer into Among them, keep the temperature for 10-40min, then cool naturally, take out the monocrystalline silicon wafer, first clean it with ethanol, then use ultrasonic cleaning, and finally blow dry, use the above-mentioned treated single crystal silicon wafer as the substrate material, and use magnetron Sputtering thin film deposition technology, prepare a layer of ZnO thin film with a thickness of 40~60nm on the substrate as the seed layer, and use ultrasonic spray pyrolysis method to deposit ZnO thin film on the above ZnO seed layer, and the mist transport carrier gas is N2, The deposition temperature range is 370-390oC, and the thickness of the ZnO film is 150-250nm. The ZnO thin film obtained by the method of the invention has (002) preferred orientation characteristics, strong ultraviolet emission and ultrafast flashing performance.

Description

technical field [0001] The invention belongs to the field of material science, in particular to a ZnO thin film, in particular to a preparation method of an ultrafast flashing ZnO thin film. Background technique [0002] Scintillation material is a crystalline energy converter that can convert incident high-energy rays (X / γ-rays) or particles into ultraviolet or visible light. It is widely used in high-energy physics and nuclear physics experiments, imaging nuclear medicine (CT and PET), industrial CT online detection, oil well exploration, safety inspection and other fields. In recent years, with the development of imaging nuclear medicine medical equipment and the increase in the demand for high-energy physics and nuclear physics experiments, the requirements for scintillators are getting higher and higher: large effective atomic number (favorable for high-energy ray absorption), higher Light output (increased signal strength), faster decay (enables real-time imaging, les...

AI Technical Summary

Problems solved by technology

[0005] Aiming at the above-mentioned technical problems in the prior art, the present invention provides a method for preparing an ultrafast flashing ZnO thin film, which solves the problems caused by the mismatch between the substrate and the thin film. Poor crystal quality and orientation, and low ratio of exciton and defect luminescence intensity in the thin film

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