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Method for producing crystal structure electrodes for oriented pzt capacitors

一种电容器、晶体结构的技术，应用在电容器、电固体器件、半导体/固态器件制造等方向，能够解决不能够防止氧扩散、无法进行等问题

Inactive Publication Date: 2009-10-21
RUICHUANG INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Current platinum technology does not prevent oxygen from diffusing to the bottom electrode
Well, this is also not capable of capacitor-on-plug Contact protection under the bottom electrode in memory architectures

Method used

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  • Method for producing crystal structure electrodes for oriented pzt capacitors
  • Method for producing crystal structure electrodes for oriented pzt capacitors
  • Method for producing crystal structure electrodes for oriented pzt capacitors

Examples

Experimental program
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Embodiment Construction

[0034] see now Figure 2-10 and 18, the bottom electrode structure for a ferroelectric capacitor includes a close-packed hexagonal crystal seed layer and an iridium bottom electrode layer 22. A seed layer is deposited on substrate 12, forming a layer about 200 angstroms thick. An iridium bottom electrode layer 22 is deposited on the surface of the seed layer to form a layer about 500-1000 angstroms thick. The seed layer can be composed of a variety of different substances, as will be further described below. The ideal seed layer has a rocking curve with a width at half maximum ("FWHM") of less than five degrees (002 for a hexagonal crystal or 200 for a tetragonal seed layer). A "rocking curve" refers to a measurement of the diffraction intensity as a function of sample rotation and maintains the Bragg conditions of diffractive crystal planes when using X-ray and electron diffraction techniques in order to determine the orientation of the deposited film. Width at half maximum...

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Abstract

The present invention describes a bottom electrode structure and method for its manufacture, which can be used to prepare an iridium electrode of a crystalline structure for constructing an oriented PZT capacitor capable of enhancing the performance of a ferroelectric memory. A seed layer with a {0001} oriented hexagonal crystal structure is used to provide a smooth surface for growing {111} oriented iridium exhibiting a face centered cubic ("FCC") structure. The surface roughness of the {111} oriented iridium produced by this seed crystal technique is very small relative to the film thickness. The highly oriented iridium layer provides support for the growth of {111} oriented PZT dielectric layer. Oriented PZT exhibits enhanced commutation polarization, reduced operating voltage, and may improve the reliability of PZT capacitors used in FRAM(R) memory and other microelectronic devices.

Description

[0001] This application is a divisional application of the Chinese patent application 03123976.5 with the filing date of May 29, 2003, and the title of the invention is "Method for Preparing Crystal Structure Electrodes of Oriented PZT Capacitors". technical field [0002] The present invention relates to ferroelectric capacitors and integrated circuit memory devices, and more particularly to oriented electrodes for ferroelectric capacitors. Background technique [0003] The terms "texture" or "orientation" generally refer to the crystallographic orientation of the material and are not to be confused with the surface smoothness of the material. In particular, discussions of electrode and dielectric material orientation refer to material crystalline orientation on the "Z axis" and generally do not describe material orientation on the X or Y axes (parallel to the integrated circuit surface). Because in fact, the grain structure of the material on the X or Y axis is usually ran...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L27/00H01L21/02
CPCH01L28/55H01L28/75
Inventor 格伦·R.·福克斯托马斯·达文波特
Owner RUICHUANG INT CO LTD
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