Schottky diode and manufacturing method thereof

Abstract

The invention discloses a Schottky diode and a manufacturing method thereof. The Schottky diode comprises a substrate, a first semiconductor layer, a second semiconductor layer, a first passivation dielectric layer, a cathode, an anode slot, a low work function anode and a high work function anode, wherein the first semiconductor layer is located on the substrate; the second semiconductor layer is located on the first semiconductor layer, and a two-dimensional electron gas is formed at the at the interface between the first semiconductor layer and the second semiconductor layer; the first passivation dielectric layer is located on the second semiconductor layer, and a part of the second semiconductor layer is exposed out of the first passivation dielectric layer; the cathode is arranged on the exposed part of the second semiconductor layer or extends to the upper surface of the first passivation dielectric layer; the anode slot extends from the first passivation dielectric layer to a region where the two-dimensional electron gas is positioned or exceeds the region where the two-dimensional electron gas is positioned; the low work function anode is arranged on the anode slot and extends to the upper surface of the second semiconductor layer; and the high work function anode covers the low work function anode, and is electrically connected with the low work function anode. The Schottky diode provided by the invention has the advantages of being low in reverse electric leakage, high in breakdown voltage, low in forward threshold voltage and turn-on resistance.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a Schottky diode and a manufacturing method thereof. Background technique [0002] In the application field of high-voltage switches, it is hoped that the diode has the characteristics of small reverse leakage, large reverse withstand voltage and small forward conduction voltage drop. Power electronic devices based on wide-bandgap semiconductor materials, especially gallium nitride materials, have superior properties. Therefore, Gallium Nitride Schottky diodes have gradually become a research hotspot in recent years. [0003] At present, Schottky diodes based on AlGaN / GaN heterostructures have gradually become an important research direction in the industry. But existing AlGaN / GaN Schottky diodes still have deficiencies. For example, field thermal electron emission or electron tunneling effect under high electric field will increase the reverse leakage, resulting in a decrease in...

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to propose a Schottky diode and a manufacturing method thereof. The Schottky diode can solve the problem that the Schottky diode in the prior art cannot simultaneously have small reverse leakage, high breakdown voltage, and forward opening. The problem of low voltage and small on-resistance

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