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Method for preparing two-dimensional hexagonal boron nitride by using molten state reaction bed

A two-dimensional hexagonal, reactive bed technology is applied in the field of preparation of two-dimensional hexagonal boron nitride, which can solve the problem of damage to the performance of two-dimensional hexagonal boron nitride materials, difficulty in peeling off two-dimensional hexagonal boron nitride, and the size of h-BN single crystal. Small and other problems, to achieve the effect of solving peeling and transfer problems, cost-effective, and easy to manufacture devices

Active Publication Date: 2015-08-26
孙旭阳
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method requires strict production conditions and long reaction time. In addition, due to the high nucleation density, the single crystal size of h-BN grown by this method is generally small and the yield is low.
Furthermore, it is very difficult to peel two-dimensional hexagonal boron nitride from the substrate (such as copper, nickel, etc.), often requiring extreme methods such as strong acid corrosion and high-temperature gasification.
The difficulty of stripping two-dimensional hexagonal boron nitride is the main reason for its high cost. The existing method of producing hexagonal boron nitride not only has high cost, but also causes great environmental pollution, and will also damage the performance of two-dimensional hexagonal boron nitride materials.

Method used

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  • Method for preparing two-dimensional hexagonal boron nitride by using molten state reaction bed
  • Method for preparing two-dimensional hexagonal boron nitride by using molten state reaction bed

Examples

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Effect test

example 1

[0036] The substance forming the molten reaction bed is sodium chloride, which is filled into a graphite crucible and placed in a high-temperature vacuum tube furnace. Under normal pressure, feed high-purity ammonia / nitrogen, raise the temperature to 1000°C, then cool down to 900°C and keep it for 5 hours. Mix and pass in continuously. Its reaction equation is as follows:

[0037] BCl 3 +2NH 3 →BN+2HCl+NH 4 Cl

[0038] Then, the temperature of the molten reaction bed is lowered to normal temperature, and the obtained solidified product is eluted with water to obtain a high-purity two-dimensional hexagonal boron nitride material. The specific surface area data of this material are shown in Table 1.

example 2

[0040] The material forming the molten state reaction bed is sodium chloride, dehydrating borax at 450°C and pressure of 79993Pa, drying ammonium chloride at 110-120°C in advance, and then pulverizing them to a fineness of 40 meshes. Sodium chloride, anhydrous borax and ammonium chloride are batched according to the mass ratio of 98.41:1:0.59, mixed and put into a graphite crucible and placed in a high-temperature vacuum tube furnace. Under normal pressure, feed high-purity ammonia / nitrogen, raise the temperature to 1100°C, then cool down to 1050°C and keep it for 5 hours. The reaction equation is as follows:

[0041] Na 2 B 4 o 7 +2NH 4 Cl+2NH 3 →4BN+2NaCl+7H 2 o

[0042] Finally, the temperature of the molten reaction bed was lowered to room temperature. The resulting solidified product is eluted with water to obtain a high-purity two-dimensional hexagonal boron nitride material. The specific surface area data of this material are shown in Table 1.

example 3

[0044] The substance forming the molten state reaction bed is potassium hydroxide, which is dry-mixed with boron gangue and tricalcium phosphate according to the mass ratio of potassium hydroxide, boron gangue and tricalcium phosphate of 92:5:3, and then the mixture is loaded into The graphite crucible is placed in a high temperature vacuum tube furnace. Under normal pressure, feed high-purity ammonia / nitrogen, raise the temperature to 1200°C, then cool down to 1150°C and keep it for 12 hours. The reaction equation is as follows:

[0045] B 2 o 3 +2NH 3 →2BN+3H 2 o

[0046] Finally, the temperature of the molten reaction bed was lowered to room temperature. The resulting solidified product was eluted with water to obtain a high-purity two-dimensional hexagonal boron nitride material, the specific surface area of ​​which is shown in Table 1.

[0047] Table 1

[0048]

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Abstract

The present invention provides a method for preparing two-dimensional hexagonal boron nitride by using a molten state reaction bed. The method comprises: 1) forming a molten state reaction bed; 2) dissolving a cracked nitrogen source and a cracked boron source in the molten state reaction bed; and 3) making the nitrogen and the boron be subjected to supersaturated precipitation in the molten state reaction bed so as to form the two-dimensional hexagonal boron nitride on the molten state reaction bed. According to the present invention, the method has characteristics of low cost, high efficiency and low pollution, the prepared two-dimensional hexagonal boron nitride has the good quality, and the difficult problem of the two-dimensional hexagonal boron nitride peeling and transfer in the engineering technology can be solved.

Description

technical field [0001] The invention relates to the field of preparation of new materials, in particular to a preparation method of two-dimensional hexagonal boron nitride. Background technique [0002] Since Andre Geim and Konstantin Novoselov of the University of Manchester successfully separated nanometer-thick two-dimensional hexagonal boron nitride from graphite in 2004, two-dimensional materials have become more and more are getting more and more attention. A variety of two-dimensional materials such as hexagonal boron nitride h-BN and metal sulfides with nanosheets have been prepared. Among them, hexagonal boron nitride h-BN has a layered structure similar to that of two-dimensional hexagonal boron nitride, but unlike the good conductor two-dimensional hexagonal boron nitride, hexagonal boron nitride is a kind of material with a band gap of 5.7eV. insulator. Since hexagonal boron nitride has an atomically flat surface, no dangling bonds, and no electron doping, it ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/064
Inventor 孙旭阳
Owner 孙旭阳
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