Aluminum tantalum rotating target material, and method used for preparing aluminum tantalum rotating target material via controlled atmosphere cold spraying

Abstract

The invention discloses an aluminum tantalum rotating target material, and a method used for preparing the aluminum tantalum rotating target material via controlled atmosphere cold spraying. According to the method, aluminum tantalum powder is taken as a raw material of the aluminum tantalum rotating target material, and the aluminum tantalum rotating target material is prepared by spraying the aluminum tantalum powder via controlled atmosphere cold spraying. The method comprises following steps: the aluminum tantalum powder with a particle size ranging from 150 to 1000 meshes is prepared, wherein purity is 99.99% or higher; a stainless steel matrix is subjected to rust removing, cleaning, abrasive blasting, and the like; under protection of inert gas, spaying of an alloy transition layer is carried out via plasma spraying; and in a circulating inert gas protective atmosphere, the aluminum tantalum rotating target material is prepared by cold spraying of the aluminum tantalum powder to the matrix containing the alloy transition layer, wherein inset gas flow amount is controlled to be 200 to 1500 SCCH, the matrix is driven to rotate around a center shaft at a speed of 60 to 150r / min, and moving speed of a spray gun is controlled to be 500 to 1500mm / min. The aluminum tantalum rotating target material is high in purity (purity>=99.99%, and oxygen content <=200ppm) and density (relative density>=97%); composition is uniform; length can be as large as 4000mm; and thickness ranges from 3 to 15mm.

Description

technical field [0001] The invention relates to a target material and its preparation technology, in particular to a method for preparing an aluminum tantalum rotating target material by controlled atmosphere cold spraying, and an aluminum tantalum rotating target material prepared by the method. Background technique [0002] Rotating targets are mainly used in flat panel displays, large-scale integrated circuits and other fields, which have extremely high requirements for the purity and density of the targets. The prior art uses vacuum melting of hollow target tubes, followed by splicing and binding to prepare large-size rotating targets. The splicing and binding of targets requires a large amount of indium, which is expensive and greatly increases the cost of targets. On the other hand, there is a gap between the bound target nodes and the nodes, and the existence of the gap can easily cause target arc discharge, reduce the film quality, affect the sputtering rate and work...

AI Technical Summary

Problems solved by technology

The existing technology uses vacuum melting hollow target tubes and then splicing and binding methods to prepare large-size rotating targets. The splicing and binding of targets requires a large amount of indium, which is expensive and greatly increases the cost of targets.

On the other hand, there is a gap between the bonded target nodes and the nodes, and the existence of the gap can easily cause target arc discharge, reduce the film quality, affect the sputtering rate and work efficiency, and increase the coating cost

[0003] At the same time, there are many problems in the existing alloy targets. With the continuous upgrading of flat-panel displays and large-scale integrated circuits, the requirements for target quality are getting higher and higher. It is urgent to find a new process to prepare high-end targets that meet the requirements. Aluminum tantalum rotating target

Images