Numerical Analysis Method of Effect of High Power Pulse on the Performance of Field Effect Transistor Amplifier

Abstract

The invention discloses a method of analyzing a numerical value of influences on performance of a field effect transistor amplifier by high-power pulses. A wave equation is used for carrying out field analysis on inputted and outputted integrated circuits, the field effect transistor performs device simulation through building a three-dimensional Poisson equation and a current continuity equation, a newton iteration method is used for solving nonlinear equations formed by the Poisson equation, a potential distribution and an electron concentration distribution inside the field effect transistor are solved under effects of high-power pulses, a heat conduction equation is introduced to obtain a heat distribution inside the device, and simulation of the overall device is completed. Gains, noise factors and other performance parameters of the field effect transistor amplifier under effects of different high-power pulses can be accurately obtained, and the change process during which device performance and reliability of the field effect transistor are reduced or even quickly disabled under high-power pulses can be elaborately simulated.

Description

technical field [0001] The invention belongs to the numerical simulation technology of microwave active circuits, in particular to a numerical simulation method for analyzing the influence of high-power microwaves on semiconductor active circuits. Background technique [0002] With the advent of the information age and the rapid development of microelectronics technology, microelectronic devices have been used in an unprecedented range of applications. An electromagnetic pulse (EMP) is an electromagnetic shock wave. From the perspective of the time domain waveform, it generally has a steep front and narrow width; from the perspective of the frequency domain, it covers a wider frequency band. The peak field strength of high-power electromagnetic pulse is extremely high, the rise time is extremely short, its energy is large, and its range of action is unmatched by other electromagnetic pulses. The threat is more serious. Therefore, it is of great significance to study the e...

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Problems solved by technology

However, in the equivalent circuit method commonly used to analyze microwave amplifier devices, the device is equivalent to a combination of various lumped elements between two ideal lossless transmission lines. The disadvantages of this method are: First, the electromagnetic wave in the transmission line The propagation on the surface is assumed to be a quasi-transverse electromagnetic wave mode; second, the interaction between active particles and electromagnetic waves in semiconductor devices is completely ignored

[0004] The numerical simulation methods commonly used in the analysis of microwave amplifier devices mainly include finite difference method and finite element method. The format of the finite difference method is simple, but it is not suitable for dealing with problems with complex boundaries.

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