Method for forming semiconductor device

Abstract

The invention relates to a method for forming a semiconductor device, comprising the following steps: providing a semiconductor substrate; carrying out first ion doping and second ion doping to form a well region and a threshold voltage regulation region disposed in the semiconductor substrate, wherein the threshold voltage regulation region is disposed on the surface of the well region; forming a semiconductor epitaxial layer on the surface of the semiconductor substrate after the formation of the well region and the threshold voltage regulation region; and forming a transistor on the surface of the semiconductor epitaxial layer, wherein the channel region of the transistor is formed by the semiconductor epitaxial layer. According to the method for forming a semiconductor device, the semiconductor epitaxial layer, as the channel region of the transistor, avoids lattice damage caused by ion doping. Moreover, the semiconductor epitaxial layer used for forming the channel region is not doped or is lightly doped with boron. Thus, carrier scattering is reduced, the carrier migration rate of the transistor is high, and the device performance is superior.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] With the development of semiconductor technology, integrated circuits with higher performance and stronger functions require greater component density, and the size, size and space of each component, between components or each component itself also need to be further reduced. [0003] However, as the dimensions of integrated circuit components shrink, it inevitably compromises the constant material properties and physical effects on which transistors and other components operate. In order to keep the performance of the transistor at an appropriate level, improvements are mainly made from the following two aspects: one is to select a high-K dielectric material as the gate dielectric layer, and select a metal material as the gate electrode layer to improve the electrical control ability o...

AI Technical Summary

Problems solved by technology

[0004] However, the performance of semiconductor devices formed by the methods of the prior art still needs to be improved

Images