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Titanium nitride-aluminium-zirconium/titanium nitride-aluminium-zirconium-silicon quaternary double layer nitride film preparation method

A technology of titanium aluminum nitride and nitride film, which is applied in the direction of coating, metal material coating process, ion implantation plating, etc., can solve the problem of hardness, film/substrate bonding force, wear resistance and high temperature oxidation resistance. Cutting requirements, complex preparation methods, low efficiency, etc., to avoid continuous adjustment of process parameters, improve work efficiency, and improve wear resistance

Inactive Publication Date: 2015-06-24
SHENYANG UNIV
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the main disadvantage of this tool film is that its hardness, film / substrate bonding force, wear resistance and high temperature oxidation resistance cannot meet the cutting requirements under extremely harsh conditions.
[0005] For the TiAlZrSi-based quaternary film with gradient structure, although the hardness, film / substrate bonding force, wear resistance and high temperature oxidation resistance of the film are greatly improved, the main disadvantage of the tool film is that its preparation method is relatively complicated. , usually need to continuously adjust the nitrogen flow or target arc current, the efficiency is low

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Prepare titanium aluminum zirconium nitride / titanium aluminum zirconium silicon quaternary double-layer nitride film on WC-8%Co cemented carbide drill bit, the method is:

[0021] 1. Determination of deposition technology: The multi-arc ion plating technology is determined to be the deposition technology of titanium aluminum zirconium nitride / titanium aluminum zirconium nitride silicon quaternary double layer nitride film.

[0022] 2. Selection of target material composition: a combination of a silicon target and three titanium-aluminum-zirconium alloy targets is selected as the arc source, the four targets are arranged at 90 degrees to each other, the purity of the silicon target is 99.99%, and the titanium-aluminum-zirconium alloy target is The titanium: aluminum: zirconium atomic ratio is 65:30:5.

[0023] 3. Workpiece selection and pretreatment process: WC-8%Co cemented carbide drill bit is selected as the workpiece, and its surface is subjected to conventional degr...

Embodiment 2

[0030] Prepare titanium aluminum zirconium nitride / titanium aluminum zirconium silicon quaternary double layer nitride film on W18Cr4V high speed steel milling cutter, the method is:

[0031] 1. Determination of deposition technology: The multi-arc ion plating technology is determined to be the deposition technology of titanium aluminum zirconium nitride / titanium aluminum zirconium nitride silicon quaternary double layer nitride film.

[0032] 2. Selection of target material composition: a combination of a silicon target and three titanium-aluminum-zirconium alloy targets is selected as the arc source, the four targets are arranged at 90 degrees to each other, the purity of the silicon target is 99.99%, and the titanium-aluminum-zirconium alloy target is The titanium: aluminum: zirconium atomic ratio is 65:30:5.

[0033] 3. Workpiece selection and pretreatment process: W18Cr4V high-speed steel milling cutter is selected as the workpiece. The surface is degreased and decontamin...

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Abstract

A titanium nitride-aluminium-zirconium / titanium nitride-aluminium-zirconium-silicon quaternary double layer nitride film preparation method includes 1, deposition technology determination; 2, target composition selection; 3, workpiece selection and pre-processing process; 4, pre-bombardment process; 5, deposition process; 6, heating and cooling process; 7, workpiece rotation process. The method has the advantages that the combination force and high-temperature oxidation resistance of the film and substrate are increased and improved, and the hardness and wear resistance of the film are improved greatly; the method is simple and easy to operate, the working efficiency is improved greatly, and the coating cost is reduced.

Description

technical field [0001] The invention relates to a method for preparing a titanium aluminum zirconium nitride / titanium aluminum zirconium silicon quaternary double-layer nitride film. Background technique [0002] Multi-arc ion plating has the advantages of high ionization rate, low deposition temperature, fast film formation rate, strong binding force, dense film structure and easy adjustment of process parameters. This technology is suitable for the preparation of composite hard films, and is suitable for titanium-based multi-layer single-layer, multi-layer double-layer and multi-layer gradient hard films such as titanium nitride, titanium aluminum nitride, titanium aluminum zirconium nitride, and titanium aluminum zirconium chromium nitride. The preparation aspect has been successfully applied. [0003] For the nitride film of titanium, aluminum, zirconium, and silicon four components, it has a higher level than that of a single nitride film such as titanium nitride, a bi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/46
Inventor 赵时璐张钧张震王双红张正贵
Owner SHENYANG UNIV
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