Tunneling field effect transistor and forming method thereof

Abstract

Disclosed are a tunneling field effect transistor and a forming method thereof. The tunneling field effect transistor comprises a semiconductor substrate, a first semiconductor layer, an annular groove, a first doping region, a first channel region, a second doping region, second channel regions, a grid electrode and a grid dielectric layer, the first semiconductor layer is positioned on the semiconductor substrate and has a first doping type, the annular groove is positioned in the first semiconductor layer, the first doping region is positioned on the first semiconductor layer and surrounded by the annular groove and has a first doping type, the first channel region is positioned on the first doping region, the second doping region is positioned on the first channel region and has a second doping type, the second channel regions are positioned on the side faces of the second doping region, the first channel region and the first doping region and at the bottom of the annular groove, the grid electrode is positioned in the annular groove, and the grid dielectric layer is positioned between the second channel regions and the grid electrode. Tunneling path and tunneling area are increased, so that performance of the tunneling field effect transistor is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a tunneling field effect transistor and a forming method thereof. Background technique [0002] In order to apply semiconductor devices in the field of ultra-low voltage and low power consumption, the device structure and process preparation method using a new conduction mechanism to obtain an ultra-steep subthreshold slope has become the focus of attention for small-sized devices. In recent years, researchers have proposed a possible solution, which is to use tunneling field effect transistors (Tunnel Field Effect transistors, TFETs). Tunneling field-effect transistors are different from traditional metal-oxide-semiconductor field-effect transistors (MOSFETs). The source-drain doping types of tunneling field-effect transistors are opposite, and the gate is used to control the band-band of the reverse-biased P-I-N junction. Tunneling realizes conduction, which can brea...

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Problems solved by technology

[0004] However, the existing tunneling field effect transistors are limited by the tunneling probability of the source junction and the tunneling area, which faces the problems of small on-state current and reduced sub-threshold swing.

Although new tunneling field-effect transistor implementations have been proposed, such as green FETs, high drive currents and Swings below 60mV / dec have never been achieved

In conclusion, although the simulation results of TFETs are very attractive, due to the low drive current (drive current) and the degraded subthreshold swing (subthreshold swing), the experimental results of TFETs cannot be compared with Traditional metal-oxide-semiconductor field-effect transistor (MOSFET) competition

[0005] To this end, a new tunneling field effect transistor and its preparation method are needed to solve the problems of small on-state current and subthreshold swing of tunneling field effect transistors.

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