Organic electroluminescence device and preparation method thereof
An electroluminescent device and luminescent technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of poor refractive index, low light-emitting performance, total reflection loss, etc., and achieve stable luminous color, Effects of improving luminous efficiency and reducing decay speed
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[0038] The preparation method of the organic electroluminescence device 100 of an embodiment, it comprises the following steps:
[0039] Step S110 , preparing the scattering layer 20 on the surface of the glass substrate 10 by electron beam evaporation.
[0040] The scattering layer 20 is formed on one side surface of the glass substrate 10 . The scattering layer 20 is composed of a ternary doped layer 201 and a metal material layer 202. The ternary doped layer 201 is prepared on the bottom surface of the glass substrate 10 by electron beam evaporation, and the ternary doped layer 201 includes a copper compound Material, calcium compound material and luminescent material, the copper compound material is selected from cuprous iodide (CuI), cuprous oxide (Cu 2 O), at least one of copper phthalocyanine (CuPc) and copper oxide (CuO), and the luminescent material is selected from 4-(dinitrile methyl)-2-butyl-6-(1,1,7,7 -Tetramethyljulodine-9-vinyl)-4H-pyran (DCJTB), 9,10-di-β-nap...
Embodiment 1
[0061] The structure prepared in this example is glass substrate / Cu 2 O:CaO:Alq 3 / Ag / ITO / MoO 3 / NPB / Alq 3 / TAZ / CsF / Ag organic electroluminescent device, in this embodiment and the following embodiments, " / " indicates a layer, and ":" indicates doping.
[0062] The glass substrate is N-LASF44. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night. The scattering layer is prepared on the glass substrate. The scattering layer is composed of a ternary doped layer and a metal material layer. The ternary doped layer is prepared on the surface of the glass substrate by electron beam evaporation, and the material is Cu. 2 O:CaO:Alq 3 , Cu 2 O, CaO and Alq 3 The mass ratio is 4:10:0.1, the thickness is 60nm, and the energy density of electron beam evaporation is 40W / cm 2 , on the surface of the ternary doped layer, a metal material layer is prepared by thermal resistance evaporation, the material is Ag, and the thickness is 70nm...
Embodiment 2
[0070] The structure prepared in this example is glass substrate / CuI:CaCl 2 :DCJTB / Al / IZO / MoO 3 / TCTA / ADN / Bphen / Cs 2 CO 3 / Au organic electroluminescent devices.
[0071] The glass substrate is N-LAF36. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night to prepare a scattering layer on the glass substrate. The scattering layer is composed of a ternary doped layer and a metal material layer. The ternary doped layer is prepared by electron beam evaporation on the surface of the glass substrate, and the material is CuI:CaCl 2 : DCJTB, CuI, CaCl 2 The mass ratio to DCJTB is 2:3:0.1, the thickness is 100nm, and the energy density of electron beam evaporation is 10W / cm 2 , on the surface of the ternary doped layer, the metal material layer is prepared by thermal resistance evaporation, the material is Al, and the thickness is 150nm. Then IZO is prepared on the scattering layer with a thickness of 80nm, which is prepared by ...
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