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Preparation process of novel C/Si film

A preparation process, a new type of technology, applied in the field of preparation process of new C/Si film, can solve the problems of micropipe defects that cannot be eliminated, difficult doping, expensive SiC bulk single crystal, etc., to increase the structure and chemical order, The effect of eliminating residual stress

Inactive Publication Date: 2015-05-27
鞠云
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, SiC bulk single whiskers grow at high temperature, doping is difficult to control, there are defects in the crystal, especially micropipe defects cannot be eliminated, and SiC bulk single crystals are very expensive, so the development of low-temperature preparation of SiC thin film technology is for the practical application of SiC devices of great significance

Method used

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  • Preparation process of novel C/Si film
  • Preparation process of novel C/Si film

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Embodiment Construction

[0011] In the experiment, graphite flakes were used as the substrate material with a purity of 99.99% and a size of 20mm×10mm×2mm. Before the experiment, the graphite substrate was polished and pretreated, and then cleaned. The process is as follows:

[0012] (1) Use #1-#6 sandpaper to polish the surface of the graphite sheet to keep the surface smooth;

[0013] (2) Wash the polished sample in 30% nitric acid for 10 minutes to remove surface impurities;

[0014] (3) Take out the sample and wash it in acetone for 10 minutes to remove the oil on the surface;

[0015] (4) Take out the sample and wash it in ethanol for 10 minutes to dissolve the organic matter on the surface;

[0016] (5) Wash the treated samples in deionized water until neutral, then take them out and dry them for later use.

[0017] A new type of C / Si film preparation process, including the following steps: the graphite substrate is fixed in the sputtering chamber of magnetron sputtering, the target material ...

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Abstract

The invention discloses a preparation process of a novel C / Si film. The preparation method comprises the following steps: fixing a graphite substrate in a sputtering cavity for magnetron sputtering; with carbon as a target material, sputtering carbon in an argon atmosphere so that carbon is deposited on the surface of the graphite substrate to form a new carbon layer; then, carrying out thermal evaporation on a sample subjected to sputtering so as to form a Si film in a vacuum deposition way, thus forming a C / Si thin film; and finally annealing in a annealing furnace.

Description

technical field [0001] The invention relates to a film preparation process, in particular to a novel C / Si film preparation process. Background technique [0002] SiC is composed of Si atoms and C atoms, and its crystal structure has the characteristics of homogeneous polytypes. In the field of semiconductors, the most common ones are 3C-SiC with cubic sphalerite structure and 4H-SiC and 6H with hexagonal wurtzite structure. -SiC. Since the 21st century, microelectromechanical systems (MEMS) with Si as the basic material have made great progress. With the continuous expansion of MEMS application fields, the performance limitations of Si materials have restricted the use of Si-based MEMS in high temperature, high frequency, and strong applications. Applications under extreme conditions such as radiation and chemical corrosion. Therefore, the search for new alternative materials for Si is receiving increasing attention. Among many semiconductor materials, SiC has obvious adv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/24C23C14/06C23C14/18
CPCC23C14/35C23C14/0605C23C14/18C23C14/24C23C14/5806
Inventor 鞠云樊磊
Owner 鞠云
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