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Monitoring method and apparatus for excimer laser annealing process

A technology of optical equipment and equipment, used in laser welding equipment, metal processing equipment, welding equipment, etc.

Active Publication Date: 2015-05-20
COHERENT LASERSYST
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

In a manufacturing environment, if variations in process energy density are necessary, visual analysis and established processes are typically performed between about an hour and an hour and a half after crystallization is performed, with a corresponding impact on line throughput of acceptable panels. Adverse effects of

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  • Monitoring method and apparatus for excimer laser annealing process
  • Monitoring method and apparatus for excimer laser annealing process
  • Monitoring method and apparatus for excimer laser annealing process

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Embodiment Construction

[0022] The ELA treatment of thin Si films results in the formation of surface roughness: bumps are formed due to the expansion of Si during curing; they are especially formed between three or more solidification fronts that collide during lateral growth. The bumps are usually not randomly arranged. In fact, they are aligned due to the corrugation process collectively referred to in the literature as laser induced periodic surface structure (LIPSS). Therefore, the corrugations consist of multiple series of aligned protrusions. Ripple formation is only observed in the energy density window (range) in which partial melting of the film is achieved. Generally, the ripple periodicity is on the order of the incident light wavelength, for example, about 290-340 nm for XeCl excimer lasers. Due to these small dimensions, the ripples cannot be observed or at best can only barely be observed using traditional optical microscope technology.

[0023] It is usually observed in optical bright...

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Abstract

A method is disclosed evaluating a silicon layer crystallized by irradiation with pulses form an excimer-laser. The crystallization produces periodic features on the crystalized layer dependent on the number of and energy density in the pulses to which the layer has been exposed. An area of the layer is illuminated with light. A detector is arranged to detect light diffracted from the illuminated area and to determine from the detected diffracted light the energy density in the pulses to which the layer has been exposed.

Description

[0001] Cross references to related applications [0002] This application requires the U.S. Provisional Application No. filed on June 22, 2012. 61 / 663,435 and the U.S. Provisional Application No. filed on May 31, 2013. The priority of 13 / 907,637, the entire disclosure of which is hereby incorporated by reference. Technical field [0003] The present invention generally relates to melting and recrystallization of thin silicon (Si) layers by pulsed laser irradiation. The method specifically relates to a method of evaluating the recrystallized layer. Background technique [0004] Silicon crystallization is a step often used in the manufacture of thin film transistors (TFT), active matrix LCDs, and organic LED (AMOLED) displays. The crystalline silicon forms a semiconductor substrate in which the circuit of the display is formed by a conventional photolithography process. Generally, crystallization is performed with a long-line form of pulsed laser beam having a uniform density dist...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66H01L21/20
CPCB23K26/083B23K26/355C30B13/24C30B13/28C30B29/06G01N21/4788G01N21/8422G01N2021/8461G01N2021/8477H01L21/02532H01L21/02587H01L21/02686H01L21/268H01L22/12B23K26/0622
Inventor P·范德威尔特
Owner COHERENT LASERSYST
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