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Wide temperature annular laser diode pumping laser and designing method thereof

A technology of laser diodes and pump lasers, which is applied in the field of wide temperature ring laser diode pump lasers, can solve unfavorable laser miniaturization, lightweight design, reduce the reliability and anti-interference of the laser system, and increase the complexity of the laser system , size and weight issues

Inactive Publication Date: 2015-04-29
LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method needs to provide additional operating energy for the active temperature control system. At the same time, the active temperature control system will increase the complexity, volume and weight of the laser system, and reduce the operational reliability and anti-interference performance of the laser system, which is not conducive to the miniaturization of the laser. , lightweight design

Method used

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  • Wide temperature annular laser diode pumping laser and designing method thereof
  • Wide temperature annular laser diode pumping laser and designing method thereof
  • Wide temperature annular laser diode pumping laser and designing method thereof

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Experimental program
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Embodiment 1

[0045] Such as figure 1 , figure 2 As shown, a wide-temperature ring laser diode pump laser includes a cooling heat sink 1 , a ring bar array 2 , a gain medium 3 , a housing 4 , and a Q-switched crystal 5 . Both the gain medium 3 and the Q-switching crystal 5 are cylindrical, and the casing 4 is set outside the cooling heat sink 1, the cooling heat sink 1 is a cuboid with a through hole in the center, and the annular bar The bar array 2 is fixedly connected to the surface of the round hole of the cooling heat sink 1, the radius of the gain medium 3 is smaller than the radius of the round hole of the cooling heat sink 1, and the gain medium 3 passes through the circle of the cooling heat sink 1 Holes, the axis of the gain medium 3 coincides with the axis of the ring bar array 2, the ring bar array 2 includes bars of at least two emission wavelengths, the intervals between adjacent bars are the same, and the adjacent bars The difference in the number of bars between the bars ...

Embodiment 2

[0058] Select Nd:YAG as the gain medium 3, and Cr:YAG as the Q-switching crystal 5, and design according to the bar array 2 design method of Embodiment 1 of the present invention, the steps are as follows:

[0059] (1) Obtain the absorption spectrum curve function σ(λ) of the laser crystal as the gain medium 3 by measurement, such as image 3 As shown, where the independent variable λ is the emission wavelength of the bar, the wavelength corresponding to the absorption peak of the laser crystal is 808nm, the emission wavelength range of the selected bar is 790-826nm, and the wavelength range is discretized as 790±1.5nm, 793nm ±1.5nm···826±1.5nm, a total of 13 value segments;

[0060] (2) Determine the required working temperature range from -20°C to 50°C, and measure the single-bar emission power function p(T) of each emission wavelength within the above temperature range, such as Figure 4 As shown, the temperature drift coefficient of the emission wavelength of the bar is k...

Embodiment 3

[0069] Select Nd: glass as the gain medium 3, Cr: YAG as the Q-switching crystal 5, and design according to the bar array 2 design method of Embodiment 1 of the present invention, the steps are as follows:

[0070] (1) Obtain the absorption spectrum curve function σ(λ) of the laser crystal as the gain medium 3 by measurement, such as Figure 8 As shown, among them, the independent variable λ is the emission wavelength of the bar, the wavelength corresponding to the absorption peak of the laser crystal is 802nm, the emission wavelength range of the selected bar is 784-820nm, and the wavelength range is discretized as 784±1.5nm, 787nm ±1.5nm···820±1.5nm, a total of 13 value segments;

[0071] (2) Determine that the required operating temperature range is -20°C to 50°C, and measure the single-bar emission power function p(T) of each wavelength within the above temperature range, such as Figure 4 As shown, the temperature drift coefficient of the emission wavelength of the bar i...

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Abstract

The invention discloses a wide temperature annular laser diode pumping laser. The wide temperature annular laser diode pumping laser comprises a cooling heat sink, an annular bar array, a gain medium and a Q-switched crystal, wherein the cooling heat sink is a cuboid with a round hole in the center; the annular bar array is fixedly connected to the surface of the round hole of the cooling heat sink and comprises bars of at least two emission wavelengths; the intervals between the adjacent bars are the same; the difference of the numbers of spaced bars between the adjacent bars of the same emission wavelength is smaller than or equal to one; the Q-switched crystal is bound to one end of the gain medium; the emission spectrum distribution of the bars in the bar array at the normal temperature is designed according to the absorption spectrum of the gain medium, the temperature drift coefficient of the bar emission wavelength and the temperature drift data of the bar emission power, it is ensured that the bar array pumping power absorbed by the gain medium is basically the same when the laser is within the temperature range of the use environment, and therefore the stability of output energy of the laser is ensured in the wide temperature environment.

Description

technical field [0001] The invention relates to the field of laser amplifiers, in particular to a wide-temperature ring laser diode-pumped laser and a design method thereof. Background technique [0002] LD (Laser Diode) pumped solid-state laser has the advantages of small size, large output energy and long service life. The pump unit LD bar of the LD pump laser has the characteristics of changing the center wavelength and emission power of the pump light with the change of the working environment temperature: as the temperature increases, the center wavelength redshifts (becomes longer ), the emitted optical power decreases; on the contrary, as the temperature decreases, the central wavelength is blue-shifted (shorter), and the emitted optical power increases. Therefore, when the working environment temperature of the LD pump laser changes, the pump light energy absorbed by the laser gain medium will change, resulting in a change in the output energy of the laser. When the...

Claims

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Application Information

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IPC IPC(8): H01S3/0941
Inventor 严雄伟郑建刚蒋新颖王振国张君田晓玲李明中吴登生张雄军康民强邓颖张永亮
Owner LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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